Type
BSZ076N06NS3 G
OptiMOS
TM
3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
V
GS
=10 V, T
C
=25 °C
2)
20 A
V
GS
=10 V, T
C
=100 °C
20
V
GS
=10 V, T
C
=25 °C,
R
thJA
=50K/W J41
3)
14
Pulsed drain current
4)
I
D,pulse
T
C
=25 °C
80
Avalanche energy, single pulse
5)
E
AS
I
D
=20 A, R
GS
=25 Ω
118 mJ
Gate source voltage
V
GS
±20 V
2)
Current is limited by bondwire; with an R
thJC
=1.8 K/W the chip is able to carry 75A.
5)
See figure 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Value
1)
J-STD20 and JESD22
4)
See figure 3 for more detailed information
V
DS
60 V
R
DS(on),max
7.6
mΩ
I
D
20 A
Product Summary
Type
BSZ076N06NS3 G
Package
PG-TSDSON-8
Marking
076N06N
Rev.2.4 page 1 2009-11-11
