BZA862AVL,115

2003 Oct 20 3
NXP Semiconductors Product data sheet
Quadruple low capacitance ESD
suppressor
BZA800AVL series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. DC working current limited by P
tot(max)
.
2. Device mounted on standard printed-circuit board.
ESD STANDARDS COMPLIANCE
THERMAL CHARACTERISTICS
Note
1. Solder point of common anode (pin 2).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
I
Z
working current T
amb
= 25 °C note 1 mA
I
F
continuous forward current T
amb
= 25 °C 200 mA
I
FSM
non-repetitive peak forward current t
p
= 1 ms; square pulse 3.5 A
P
tot
total power dissipation T
amb
= 25 °C; note 2; see Fig.5 300 mW
P
ZSM
non repetitive peak reverse power
dissipation
square pulse; t
p
= 1 ms 6 W
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
ESD electrostatic discharge IEC 61000-4-2 (contact discharge) 15 kV
HBM MIL-Std 883 10 kV
STANDARD CONDITIONS
IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact discharge)
HBM MIL-Std 883, class 3 >4 kV
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
all diodes loaded 410 K/W
R
th j-s
thermal resistance from junction to
solder point; note
1
one diode loaded 200 K/W
all diodes loaded 185 K/W
2003 Oct 20 4
NXP Semiconductors Product data sheet
Quadruple low capacitance ESD
suppressor
BZA800AVL series
ELECTRICAL CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage I
F
= 200 mA 1.2 V
I
R
reverse current
BZA856AVL V
R
= 3 V 200 nA
BZA862AVL V
R
= 4 V 100 nA
BZA868AVL V
R
= 4.3 V 20 nA
V
Z
working voltage I
Z
= 1 mA
BZA856AVL 5.32 5.6 5.88 V
BZA862AVL 5.89 6.2 6.51 V
BZA868AVL 6.46 6.8 7.14 V
r
dif
differential resistance I
Z
= 1 mA
BZA856AVL 200
BZA862AVL 150
BZA868AVL 100
S
Z
temperature coefficient I
Z
= 1 mA
BZA856AVL 1.3 mV/K
BZA862AVL 2.4 mV/K
BZA868AVL 2.9 mV/K
C
d
diode capacitance f = 1 MHz; V
R
= 0
BZA856AVL 22 28 pF
BZA862AVL 18 22 pF
BZA868AVL 16 19 pF
diode capacitance f = 1 MHz; V
R
= 5 V
BZA856AVL 12 17 pF
BZA862AVL 9 12 pF
BZA868AVL 8 11 pF
I
ZSM
non-repetitive peak reverse current t
p
= 1 ms; T
amb
= 25 °C
BZA856AVL 0.90 A
BZA862AVL 0.85 A
BZA868AVL 0.80 A
2003 Oct 20 5
NXP Semiconductors Product data sheet
Quadruple low capacitance ESD
suppressor
BZA800AVL series
handbook, halfpage
10
1
10
1
MLD997
10
2
10
1
1
t
p
(ms)
I
ZSM
(A)
10
BZA856AVL
BZA862AVL/BZA868AVL
Fig.2 Maximum non-repetitive peak reverse
current as a function of pulse time.
handbook, halfpage
10
1
10
2
MLD999
10
2
10
1
1
t
p
(ms)
P
ZSM
(W)
10
BZA862AVL
BZA856AVL
BZA868AVL
Fig.3 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
handbook, halfpage
05
26
6
10
14
18
22
1234
V
R
(V)
C
d
(pF)
MLD998
BZA862AVL
BZA868AVL
BZA856AVL
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
T
j
= 25 °C; f = 1 MHz.
handbook, halfpage
050
T
amb
(°C)
P
tot
(mW)
100 150
400
300
100
0
200
MLD793
Fig.5 Power derating curve.

BZA862AVL,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
TVS Diode Arrays DIODE ARRAY TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
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