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MJL21195G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 5
1 Publication Order Number:
MJL21195/D
MJL21195(PNP),
MJL21196(NPN)
Silicon Power Transistors
The MJL21195 and MJL21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• Epoxy Meets UL 94, V−0 @ 0.125 in
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
250 Vdc
Collector−Base Voltage V
CBO
400 Vdc
Emitter−Base Voltage V
EBO
5 Vdc
Collector−Emitter Voltage − 1.5 V V
CEX
400 Vdc
Collector Current − Continuous I
C
16 Adc
Collector Current − Peak (Note 1) I
CM
30 Adc
Base Current − Continuous I
B
5 Adc
Total Power Dissipation
@ T
C
= 25°C
Derate Above 25°C
P
D
200
1.43
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−   65 to +150
°C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.7 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−264
CASE 340G
STYLE 2
http://onsemi.com
16 A COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 V, 200 W
x = 5 or 6
A = Assembly Location
YY = Year
WW = Work Week
G = Pb−Free Package
MJL2119x
AYYWWG
MARKING
DIAGRAM
Device Package Shipping
ORDERING INFORMATION
MJL21195G TO−264
(Pb−Free)
25 Units / Rail
MJL21196G TO−264
(Pb−Free)
25 Units / Rail
COMPLEMENTARY
1
BASE
3
EMITTER
COLLECTOR
2
1
BASE
3
EMITTER
COLLECTOR
2
1
2
3
MJL21195 (PNP), MJL21196 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typical Max Unit
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
V
CEO(sus)
250 − −
Vdc
Collector Cutoff Current
(V
CE
= 200 Vdc, I
B
= 0)
I
CEO
− − 100
mAdc
OFF CHARACTERISTICS (Note 3)
Emitter Cutoff Current
(V
CE
= 5 Vdc, I
C
= 0)
I
EBO
− − 100
mAdc
Collector Cutoff Current
(V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc)
I
CEX
− − 100
mAdc
SECOND BREAKDOWN (Note 3)
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (Nonrepetitive)
(V
CE
= 80 Vdc, t = 1 s (Nonrepetitive)
I
S/b
4.0
2.25
−
−
−
−
Adc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, I
B
= 5 Adc)
h
FE
25
8.0
−
−
100
−
−
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
V
BE(on)
− − 2.2
Vdc
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
V
CE(sat)
−
−
−
−
1.4
4
Vdc
DYNAMIC CHARACTERISTICS (Note 3)
Total Harmonic Distortion at the Output
(V
RMS
= 28.3 V, f = 1 kHz, P
LOAD
= 100 W
RMS
)
h
FE
unmatched
(Matched pair h
FE
= 50 @ 5 A/5 V)
h
FE
matched
T
HD
−
−
0.8
0.08
−
−
%
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
4 − −
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
C
ob
− − 500
pF
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
I
C
, COLLECTOR CURRENT (A)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
, CURRENT BANDWIDTH PRODUCT (MHz)
T
PNP MJL21195 NPN MJL21196
I
C
, COLLECTOR CURRENT (A)
6.5
6.0
5.5
5.0
4.5
4.0
2.5
2.0
1.0 100.1
7.5
7.0
6.0
5.0
4.0
3.0
2.0
1.0 100.1
1.0
V
CE
= 10 V
T
J
= 25°C
f
test
= 1 MHz
V
CE
= 10 V
T
J
= 25°C
f
test
= 1 MHz
3.5
3.0
6.5
5.5
4.5
3.5
2.5
1.5
F
, CURRENT BANDWIDTH PRODUCT (MHz)
T
F
V
CE
= 5 V
V
CE
= 5 V
MJL21195 (PNP), MJL21196 (NPN)
http://onsemi.com
3
Figure 3. DC Current Gain, V
CE
= 20 V Figure 4. DC Current Gain, V
CE
= 20 V
Figure 5. DC Current Gain, V
CE
= 5 V Figure 6. DC Current Gain, V
CE
= 5 V
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Typical Output Characteristics
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 8. Typical Output Characteristics
I
C
, COLLECTOR CURRENT (A)
PNP MJL21195 NPN MJL21196
h
FE
, DC CURRENT GAIN
TYPICAL CHARACTERISTICS
PNP MJL21195
PNP MJL21195
NPN MJL21196
NPN MJL21196
1000
100
10
100101.00.1
1000
10
100101.00.1
1000
100
10
100101.00.1
1000
10
100101.00.1
30
0
25
20
15
10
5.0
0
5.0 10 15 20 25
30
0
25
20
15
5.0
0
5.0 10 15 20 25
10
V
CE
= 20 V
T
J
= 100°C
25°C
-25°C
V
CE
= 20 V
T
J
= 100°C
25°C
-25°C
V
CE
= 5 V
T
J
= 100°C
25°C
-25°C
V
CE
= 5 V
T
J
= 100°C
25°C
-25°C
T
J
= 25°C
I
B
= 0.5 A
1.0 A
1.5 A
2.0 A
T
J
= 25°C
I
B
= 0.5 A
1.0 A
1.5 A
2.0 A
100
100
P1-P3P4-P6

MJL21195G

Mfr. #:
Buy MJL21195G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT BIP PNP 16A 250V FG
Lifecycle:
New from this manufacturer.
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