© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 12
1 Publication Order Number:
MBR1635/D
MBR1635, MBR1645,
MBRB1645, NRVBB1645
Switch Mode
Power Rectifiers
16 A, 35 and 45 V
These state−of−the−art devices use the Schottky Barrier principle
with a platinum barrier metal.
Features
• Guard−ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams for TO−220
1.7 Grams for D
2
PAK
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBR1635
MBR1645
MBRB1645
V
RRM
V
RWM
V
R
35
45
45
V
Average Rectified Forward Current Delay
(Rated V
R
, T
C
= 163°C) Total Device
I
F(AV)
16
A
Peak Repetitive Forward Current, Per
Leg
(Rated V
R
, Square Wave,
20 kHz, T
C
= 157°C) Total Device
I
FRM
32 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
150 A
Peak Repetitive Reverse Surge Current
(2.0 ms, 1.0 kHz)
I
RRM
1.0 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature (Note 1) T
J
−65 to +175 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
Device Package Shipping
ORDERING INFORMATION
TO−220AC
CASE 221B
PLASTIC
3
4
1
MBR1635G TO−220
(Pb−Free)
50 Units / Rail
3 1, 4
MARKING
DIAGRAMS
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
B16x5 = Device Code
x = 3 or 4
KA = Diode Polarity
G = Pb−Free Package
AYWWG
B16x5
KA
MBR1645G TO−220
(Pb−Free)
50 Units / Rail
B1645G
AYWW
D
2
PAK
CASE 418B
STYLE 3
3
4
1
B1645 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MBRB1645T4G D
2
PAK
(Pb−Free)
800 Units / Rail
1
3
4
NRVBB1645T4G D
2
PAK
(Pb−Free)
800 Units / Rail
