AO4476A
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage
1.5 1.98 2.5 V
I
D(ON)
110 A
6.4 7.7
T
J
=125°C 10 12
8.6 10.8 mΩ
g
FS
45 S
V
SD
0.74 1 V
I
S
4 A
C
iss
920 1150 1380 pF
C
oss
125 180 235 pF
C
rss
60 105 150 pF
R
g
0.55 1.1 1.65 Ω
Q
g
(10V) 16 20 24 nC
Q
g
(4.5V) 7.6 9.5 11.4 nC
Q
gs
2 2.7 3.2 nC
Q
gd
3 5 7 nC
t
D(on)
6.5 ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Forward Transconductance
Diode Forward Voltage
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=15A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=15A
V
GS
=4.5V, I
D
=12A
I
DSS
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=15A
R
DS(ON)
Static Drain-Source On-Resistance
r
t
D(off)
17 ns
t
f
3.5 ns
t
rr
7
8.7 10.5 ns
Q
rr
11
13.5 16
nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
I
F
=15A, dI/dt=500A/µs
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1
,
R
GEN
=3Ω
Turn-Off Fall Time
I
F
=15A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
Rev1: September 2010 www.aosmd.com Page 2 of 6
