WP7113P3C Datasheet WP7113P3C | P1-P3

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DESCRIPTION

z Made with NPN silicon phototransistor chips

FEATURES

z Mechanically and spectrally matched to the infrared

emitting LED lamp

z RoHS compliant

APPLICATIONS

z Infrared applied systems

z Optoelectronic switches

z Photodetector control circuits

z Sensor technology

PACKAGE DIMENSIONS

WP7113P3C

Phototransistor

Note:

1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033.

ABSOLUTE MAXIMUM RATINGS at T

A

=25°C

Parameter Units

Collector-to-Emitter Voltage V

Emitter-to-Collector Voltage V

Power Dissipation at (or below) 25°C Free Air Temperature mW

Operating Temperature °C

Storage Temperature °C

Max.Ratings

30

5

100

-40 to +85

Lead Soldering Temperature(>5mm for 5sec) 260 °C

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ±0.25(0.01") unless otherwise noted.

3. Lead spacing is measured where the leads emerge from the package.

4. The specifications, characteristics and technical data described in the datasheet are subject to change

without prior notice.

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ELECTRICAL / OPTICAL CHARACTERISTICS at T

A

=25°C

WP7113P3C

0%

20%

40%

60%

80%

100%

350 450 550 650 750 850 950 1050 1150

T

a

= 25 °C

Wavelength (nm)

Relative spectral sensitivity (a. u.)

RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH

0.5 0.5

90°

15°

0°

30°

45°

60°

75°

-15°

-30°

-45°

-60°

-75°

-90°

0.01.0 1.0

T

a

= 25 °C

Relative sensitivity

RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT

Parameter Symbol Min. Typ. Max. Units Test Conditions

Collector-to-Emitter Breakdown Voltage V

BR

CEO

30 - - V

I

C

= 100uA

Ee = 0mW/cm

2

Emitter-to-Collector Breakdown Voltage V

BR

ECO

5 - - V

I

E

= 100uA

Ee = 0mW/cm

2

Collector-to-Emitter Saturation Voltage V

CE (SAT)

- - 0.8 V

I

C

= 2mA

Ee = 20mW/cm

2

Collector Dark Current I

CEO

- - 100 nA

V

CE

= 10V

Ee = 0mW/cm

2

Rise Time(10% to 90%) T

R

- 15 - µS

V

CE

= 5V

IC = 1mA

RL = 1000Ω

Fall Time(90% to 10%) T

F

- 15 - µS

On State Collector Current I

(ON)

0.5 2.5 - mA

V

CE

= 5V

Ee = 1mW/cm

2

λ = 940nm

Range of spectral bandwidth λ

0.1

420 - 1120 nm -

Wavelength of peak sensitivity λ

p

- 940 - nm -

Angle of half sensitivity

2θ1/2

- 20 - deg -

TECHNICAL DATA

PHOTOTRANSISTOR

0

1

2

3

4

5

012345

T

a

= 25 °C

Collector-emitter voltage V

CE

(V)

Collector current (mA)

Ee = 0.25mW/cm

2

Ee = 0.5mW/cm

2

Ee = 1mW/cm

2

0.01

0.1

1

10

100

0.01 0.1 1 10

V

CE

=5V

T

a

= 25 °C

Irradiance Ee (mW/cm

2

)

Collector current Ic (mA)

0

20

40

60

80

100

120

140

160

0 20406080100

V

CE

=5V

Ee=1mW/cm

2

Ambient temperature (°C)

Relative collector current (%)

Collector Current vs.

Irradiance

Relative Collector Current vs.

Ambient Temperature

Collector Current vs.

Collector-Emitter Voltage

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TECHNICAL DATA

WP7113P3C

PHOTOTRANSISTOR

RECOMMENDED WAVE SOLDERING PROFILE

Notes:

1. Recommend pre-heat temperature of 105°C or less (as measured with a thermocouple

attached to the LED pins) prior to immersion in the solder wave with a maximum solder bath

temperature of 260°C

2. Peak wave soldering temperature between 245°C ~ 255°C for 3 sec (5 sec max).

3. Do not apply stress to the epoxy resin while the temperature is above 85°C.

4. Fixtures should not incur stress on the component when mounting and during soldering process.

5. SAC 305 solder alloy is recommended.

6. No more than one wave soldering pass.

PACKING & LABEL SPECIFICATIONS

0

25

50

75

100

125

0 20406080100

Ambient temperature (°C)

Collector power dissipation

Pd (mW)

0.1

1

10

100

1000

0 25 50 75 100

V

CE

= 20V

Ee = 0

Ambient temperature (°C)

Collector dark current (nA)

0.01

0.1

1

10

0 5 10 15 20 25 30

T

a

= 25 °C

Collector-emitter voltage V

CE

(V)

Collector dark current (nA)

Collector Dark Current vs.

Ambient Temperature

Collector Power Dissipation vs.

Ambient Temperature

Collector Dark Current vs.

Collector-Emitter Voltage

WP7113P3C

WP7113P3C

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