AOL1404G

AOL1404G
General Description Product Summary
V
DS
I
D
(at V
GS
=4.5V) 46A
R
DS(ON)
(at V
GS
=4.5V) < 4.6mΩ
R
DS(ON)
(at V
GS
=2.5V) < 6mΩ
Applications 100% UIS Tested
100% Rg Tested
Symbol
V
DS
V
GS
I
DM
I
AS
Avalanche energy L=0.1mH
C
E
AS
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
qJC
• DC/DC Converters in Computing, Servers, and POL
• Battery protection switch
Power Dissipation
B
20
T
C
=100°C
P
D
20
50
Gate-Source Voltage
Pulsed Drain Current
C
46
Parameter
Drain-Source Voltage
Continuous Drain
Current
G
Maximum Junction-to-Case
Maximum Junction-to-Ambient
A D
2.0
50
2.5
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±12
Maximum
AOL1404G
Ultra SO8
Tape & Reel
3000
I
D
40
184
I
DSM
24
80
30
46
Maximum Junction-to-Ambient
A
R
qJA
15
40
20
Thermal Characteristics
Parameter
Max
T
A
=70°C
4
Junction and Storage Temperature Range
-55 to 150
Typ
P
DSM
T
A
=25°C
6.2
Power Dissipation
A
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
Avalanche Current
C
Continuous Drain
Current
20V N-Channel MOSFET
Orderable Part Number
Package Type
Form
Minimum Order Quantity
20V
• Trench Power MOSFET technology
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
G
D
S
UltraSO-8
TM
Top View Bottom View
G
D
S
G
S
Rev.1.0: August 2017 www.aosmd.com Page 1 of 6
AOL1404G
Symbol Min Typ Max Units
BV
DSS
20 V
V
DS
=20V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage
0.45 0.85 1.25 V
3.8 4.6
T
J
=125°C 5.3 6.5
4.7 6
g
FS
100 S
V
SD
0.6 1 V
I
S
46 A
C
iss
3300 pF
C
oss
485 pF
C
rss
370 pF
R
g
1.2 2.4 3.6 Ω
Q
g
(4.5V) 31 45 nC
Q
gs
5.2 nC
Q
gd
8 nC
t
D(on)
7.5 ns
t
r
15 ns
t
D(off)
72 ns
t
f
21 ns
t
rr 17 ns
Q
rr 30
nC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
V
DS
=V
GS,
I
D
=250mA
Drain-Source Breakdown Voltage
I
D
=250μA, V
GS
=0V
I
DSS
μA
Zero Gate Voltage Drain Current
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, di/dt=500A/ms
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=10V, R
L
=0.5W,
R
GEN
=3W
I
F
=20A, di/dt=500A/ms
Turn-On Rise Time
Turn-On DelayTime
Gate-Body leakage current
Diode Forward Voltage
DYNAMIC PARAMETERS
V
GS
=2.5V, I
D
=18A
R
DS(ON)
Static Drain-Source On-Resistance
V
DS
=0V, V
GS
12V
Forward Transconductance
mΩ
Gate resistance
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=4.5V, I
D
=20A
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Maximum Body-Diode Continuous Current
G
Input Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=10V, f=1MHz
Output Capacitance
Gate Source Charge
f=1MHz
V
GS
=4.5V, V
DS
=10V, I
D
=20A
A. The value of R
qJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on R
qJA
t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
qJA
is the sum of the thermal impedance from junction to case R
qJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev.1.0: August 2017 www.aosmd.com Page 2 of 6
AOL1404G
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
0 0.5 1 1.5 2 2.5 3
I
D
(A)
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
2
3
4
5
6
0 5 10 15 20 25 30
R
DS(ON)
(mW)
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
I
S
(A)
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
(Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS
=2.5V
I
D
=18A
V
GS
=4.5V
I
D
=20A
0
2
4
6
8
10
12
0 2 4 6 8 10
R
DS(ON)
(mW)
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
I
D
=20A
25°C
125°C
0
20
40
60
80
0 1 2 3 4 5
I
D
(A)
V
DS
(Volts)
Figure 1: On-Region Characteristics (Note E)
V
GS
=1.5V
4.5V
2.5V
2V
Rev.1.0: September 2013 www.aosmd.com Page 3 of 6

AOL1404G

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH 20V 18A 8ULTRASO
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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