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MBRAF3200T3G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2016
December, 2016 − Rev. 3
1 Publication Order Number:
MBRAF3200T3/D
MBRAF3200, NRVBAF3200
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very High Blocking Voltage − 200 V
• 150°C Operating Junction Temperature
• Guard−Ring for Stress Protection
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• This is a Pb−Free Device
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Cathode Polarity Band
• Device Meets MSL 1 Requirements
• ESD Ratings: Machine Model = A
ESD Ratings: Human Body Model = 1B
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
200 V
Average Rectified Forward Current
(T
L
= 100°C)
I
F(AV)
3.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
100 A
Operating Junction Temperature T
J
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device Package Shipping
†
ORDERING INFORMATION
SMA−FL
CASE 403AA
STYLE 6
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERE
200 VOLTS
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBRAF3200T3G SMA−FL
(Pb−Free)
5000 / Tape & Ree
l
RAC = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
NRVBAF3200T3G SMA−FL
(Pb−Free)
5000 / Tape & Ree
l
RAC
AYWWG
MBRAF3200, NRVBAF3200
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 1
Thermal Resistance, Junction−to−Ambient (Note 1)
R
q
JL
R
q
JA
25
90
°C/W
1. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 3.0 A, T
J
= 25°C)
(I
F
= 4.0 A, T
J
= 25°C)
(I
F
= 3.0 A, T
J
= 150°C)
V
F
0.84
0.86
0.62
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 150°C)
I
R
1.0
6.0
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
100
1
0.1
10.2 0.3 0.4 0.5 0.6 0.7
V
F
, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
10
0.8 0.9 1.1 1.2
I
F
, FORWARD CURRENT (A)
T
C
= 25°C
T
C
= 150°C
T
C
= 100°C
100
1
0.1
10.2 0.3 0.4 0.5 0.6 0.7
V
F
, INSTANTANEOUS VOLTAGE (V)
10
0.8 0.9 1.1 1.2
I
F
, FORWARD CURRENT (A)
T
C
= 25°C
T
C
= 150°C
T
C
= 100°C
1.0E−09
1600 20 40 60 80 100
V
R
, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
120 140 180 200
I
R
, REVERSE CURRENT (A)
T
C
= 25°C
T
C
= 150°C
T
C
= 100°C
1.0E−08
1.0E−07
1.0E−06
1.0E−05
1.0E−04
1.0E−03
1.0E−06
1600 20 40 60 80 100
V
R
, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
120 140 180 20
0
I
R
, MAXIMUM REVERSE CURRENT (A)
T
C
= 25°C
T
C
= 150°C
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
MBRAF3200, NRVBAF3200
www.onsemi.com
3
Figure 5. Typical Capacitance
1000
10
1600 20 40 60 80 100
V
R
, REVERSE VOLTAGE (V)
100
120 140 180 200
C, CAPACITANCE (pF)
T
C
= 25°C
f = 1 MHz
Typical Capacitance
at 0 V = 209 V
T
C
, LEAD TEMPERATURE (C°)
20 1006040 80
4
2
3
5
0
1
DC
SQUARE
WAVE
120 140 160
I , AVERAGE FORWARD CURRENT (A)
F (AV)
Figure 6. Current Derating
R
q
JL
= 25°C/W
0
180
0.001
0.01
0.1
1
10
100
0.0000001 0.000001 0.00001 0.0001 10000.001 0.01 0.1 1 10 100
Figure 7. Typical Transient Thermal Response, Junction−to−Ambient
t, PULSE TIME (S)
R
(t)
, TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
P1-P3P4-P4

MBRAF3200T3G

Mfr. #:
Buy MBRAF3200T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 3 A 200 V SCHOTTKY RECTIFIER
Lifecycle:
New from this manufacturer.
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