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IXFR80N20Q

P1-P2
1 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 200 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MW 200 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C 71A
I
DM
T
C
= 25°C, pulse width limited by T
JM
320 A
I
AR
T
C
= 25°C 80A
E
AR
T
C
= 25°C 45 mJ
E
AS
1.5 J
dv/dt I
S
£ I
DM
, di/dt £ 100 A/ms, V
DD
£ V
DSS
, 5 V/ns
T
J
£ 150°C, R
G
= 2 W
P
D
T
C
= 25°C 310 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.063 in) from case for 10 s 300 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight 5g
N-Channel Enhancement Mode
Avalanche Rated
Low Q
g
,
High dv/dt
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 250 uA 200 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA 2.0 4.0 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= V
DSS
T
J
= 25°C25mA
V
GS
= 0 V T
J
= 125°C1mA
R
DS(on)
V
GS
= 10 V, I
D
= I
T
28 mW
Note 1
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
, Q-Class
(Electrically Isolated Back Surface)
98617A (7/00)
G
D
G = Gate D = Drain
S = Source TAB = Drain
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXFR 80N20Q V
DSS
= 200 V
I
D25
= 71 A
R
DS(on)
= 28mW
t
rr
£ 200 ns
ISOPLUS 247
TM
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
2 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= I
T
Note 1 35 45 S
C
iss
4600 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1100 pF
C
rss
500 pF
t
d(on)
26 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= I
T
50 ns
t
d(off)
R
G
= 2 W (External), 75 ns
t
f
20 ns
Q
g(on)
180 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= I
T
39 nC
Q
gd
100 nC
R
thJC
0.40 K/W
R
thCK
0.15 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 80 A
I
SM
Repetitive; 320 A
pulse width limited by T
JM
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1 1.5 V
t
rr
200 ns
Q
RM
1.2 mC
I
RM
10 A
I
F
= I
S
, -di/dt = 100 A/ms, V
R
= 100 V
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %; I
T
= 80A
IXFR 80N20Q
ISOPLUS 247 (IXFR) OUTLINE
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
P1-P2

IXFR80N20Q

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Description:
MOSFET 80 Amps 200V 0.03 Rds
Lifecycle:
New from this manufacturer.
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