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MM74HC4316
Absolute Maximum Ratings(Note 1)
(Note 2)
Recommended Operating
Conditions
Note 1: Absolute Maximum Ratings are those values beyond which dam-
age to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground.
Note 3: Power Dissipation temperature derating — plastic “N” package: −
12 mW/°C from 65°C to 85°C.
DC Electrical Characteristics (Note 4)
Note 4: For a power supply of 5V ±10% the worst case on resistances (R
ON
) occurs for HC at 4.5V. Thus the 4.5V values should be used when designing
with this supply. Worst case V
IH
and V
IL
occur at V
CC
= 5.5V and 4.5V respectively. (The V
IH
value at 5.5V is 3.85V.) The worst case leakage current occurs
for CMOS at the higher voltage and so the 5.5V values should be used.
Note 5: At supply voltages (V
CC
–V
EE
) approaching 2V the analog switch on resistance becomes extremely non-linear. Therefore it is recommended that
these devices be used to transmit digital only when using these supply voltages.
Supply Voltage (V
CC
) −0.5 to +7.5V
Supply Voltage (V
EE
) +0.5 to −7.5V
DC Control Input Voltage (V
IN
) −1.5 to V
CC
+1.5V
DC Switch I/O Voltage (V
IO
)V
EE
−0.5 to V
CC
+0.5V
Clamp Diode Current (I
IK
, I
OK
) ±20 mA
DC Output Current, per pin (I
OUT
) ±25 mA
DC V
CC
or GND Current, per pin (I
CC
) ±50 mA
Storage Temperature Range (T
STG
) −65°C to +150°C
Power Dissipation (P
D
)
(Note 3) 600 mW
S.O. Package only 500 mW
Lead Temperature (T
L
)
(Soldering 10 seconds) 260
°C
Min Max Units
Supply Voltage (V
CC
)26V
Supply Voltage (V
EE
)0−6V
DC Input or Output Voltage
(V
IN
, V
OUT
)0V
CC
V
Operating Temperature Range (T
A
) −40 +85 °C
Input Rise or Fall Times
(t
r
, t
f
) V
CC
= 2.0V 1000 ns
V
CC
= 4.5V 500 ns
V
CC
= 6.0V 400 ns
V
CC
= 12.0V 250 ns
Symbol Parameter Conditions
V
EE
V
CC
T
A
= 25°CT
A
= −40 to 85°CT
A
= −55 to 125°C
Units
Typ Guaranteed Limits
V
IH
Minimum HIGH Level 2.0V 1.5 1.5 1.5 V
Input Voltage 4.5V 3.15 3.15 3.15 V
6.0V 4.2 4.2 4.2 V
V
IL
Maximum LOW Level 2.0V 0.5 0.5 0.5 V
Input Voltage 4.5V 1.35 1.35 1.35 V
6.0V 1.8 1.8 1.8 V
R
ON
Minimum “ON” Resistance V
CTL
= V
IH
, I
S
= 2.0 mA GND 4.5V 100 170 200 220 Ω
(Note 5) V
IS
= V
CC
to V
EE
−4.5V 4.5V 40 85 105 110 Ω
(Figure 1) −6.0V 6.0V 30 70 85 90 Ω
GND 2.0V 100 180 215 240 Ω
V
CTL
= V
IH
, I
S
= 2.0 mA GND 4.5V 40 80 100 120 Ω
V
IS
= V
CC
or V
EE
−4.5V 4.5V 50 60 75 80 Ω
(Figure 1) −6.0V 6.0V 20 40 60 70 Ω
R
ON
Maximum “ON” Resistance V
CTL
= V
IH
GND 4.5V 10 15 20 20 Ω
Matching V
IS
= V
CC
to V
EE
−4.5V 4.5V 5 10 15 15 Ω
−6.0V 6.0V 5 10 15 15 Ω
I
IN
Maximum Control V
IN
= V
CC
or GND GND 6.0V ±0.1 ±1.0 ±1.0 µA
Input Current
I
IZ
Maximum Switch “OFF” V
OS
= V
CC
or V
EE
GND 6.0V ±60 ±600 ±600 nA
Leakage Current V
IS
= V
EE
or V
CC
−6.0V 6.0V ±100 ±1000 ±1000 nA
V
CTL
= V
IL
(Figure 2)
I
IZ
Maximum Switch “ON” V
IS
= V
CC
to V
EE
GND 6.0V ±40 ±150 ±150 nA
Leakage Current V
CTL
= V
IH
, V
OS
= OPEN −6.0V 6.0V ±60 ±300 ±300 nA
(Figure 3)
I
CC
Maximum Quiescent V
IN
= V
CC
or GND GND 6.0V 2.0 20 40 µA
Supply Current I
OUT
= 0 µA −6.0V 6.0V 8.0 80 160 µA
