NST30010MXV6T1G, NSVT30010MXV6T1G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Parameter Symbol
One Device
Heated
Both Devices
Heated
Unit
Total Device Dissipation,
T
A
= 25C (Note 1)
Derate above 25C (Note 1)
T
A
= 25C (Note 2)
Derate above 25C (Note 2)
Two Devices Heated Total Package P
D
357
2.9
429
3.4
500 (250 ea)
4.0
661 (331 ea)
5.3
mW
mW/C
mW
mW/C
Thermal Resistance
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
One Heated Device
R
q
JA
350
291
250
189
C/W
Thermal Resistance
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
Unheated Device Heated by
Heated Device
Y
JA
149
88
−
−
C/W
Thermal Resistance
Junction-to-Lead (Note 1)
Junction-to-Lead (Note 2)
Lead Attached to Heated Device
Y
JL
128
152
76
85
C/W
Thermal Resistance
Junction-to-Lead (Note 1)
Junction-to-Lead (Note 2)
Heated Device Heating Lead
Attached to Unheated Device
Y
JL
224
222
−
−
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150
C
1. PCB with 51 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB
76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51.
2. PCB with 250 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB
76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51.
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (I
C
= −10 mA) V
(BR)CEO
−30 − − V
Collector−Emitter Breakdown Voltage, (I
C
= −10 mA, V
EB
= 0)
V
(BR)CES
−30 − − V
Collector−Base Breakdown Voltage, (I
C
= −10 mA)
V
(BR)CBO
−30 − − V
Emitter−Base Breakdown Voltage, (I
E
= −1.0 mA)
V
(BR)EBO
−5.0 − − V
Collector Cutoff Current (V
CB
= −30 V)
Collector Cutoff Current (V
CB
= −30 V, T
A
= 150C)
I
CBO
−
−
−
−
−15
−4.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mA, V
CE
= −5.0 V)
(I
C
= −2.0 mA, V
CE
= −5.0 V)
(I
C
= −2.0 mA, V
CE
= −5.0 V) (Note 3)
h
FE
h
FE(1)/
h
FE(2)
270
420
0.9
−
520
1.0
−
800
−
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
V
CE(sat)
−
−
−
−
−0.30
−0.60
V
Base −Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −1.0 mA)
(I
C
= −100 mA, I
B
= −10 mA)
V
BE(sat)
−
−
−0.75
−0.90
−
−
V
Base −Emitter On Voltage
(I
C
= −2.0 mA, V
CE
= −5.0 V)
(I
C
= −10 mA, V
CE
= −5.0 V)
(I
C
= −2.0 mA, V
CE
= −5.0 V) (Note 4)
V
BE(on)
V
BE(1)
−
V
BE(2)
−0.60
−
−
−
−
1.0
−0.75
−0.82
2.0
V
mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product, (I
C
= −10 mA, V
CE
= −5 Vdc, f = 100 MHz) f
T
100 − − MHz
Output Capacitance, (V
CB
= −10 V, f = 1.0 MHz) C
ob
− − 4.5 pF
Noise Figure, (I
C
= −0.2 mA, V
CE
= −5 Vdc, R
S
= 2 kW, f = 1 kHz, BW = 200Hz)
NF − − 10 dB
3. h
FE(1)
/h
FE(2)
is the ratio of one transistor compared to the other transistor within the same package. The smaller h
FE
is used as numerator.
4. V
BE(1)
− V
BE(2)
is the absolute difference of one transistor compared to the other transistor within the same package.
