VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Dec-16
1
Document Number: 93587
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power Rectifiers Diodes (T-Modules), 40 A to 110 A
FEATURES
Electrically isolated base plate
Types up to 1200 V
RRM
3500 V
RMS
isolating voltage
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
Designed and qualified for industrial level
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
These series of T-modules use standard recovery power
rectifier diodes. The semiconductors are electrically isolated
from the metal base, allowing common heatsink and
compact assembly to be built.
Applications include power supplies, battery charges,
welders, motor controls and general industrial current
rectification.
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
I
F(AV)
40 A to 110 A
Type Modules - Diode, High Voltage
V
RRM
100 V to 1200 V
Package D-55 (T-module)
Circuit Single diode
D-55 (T-module)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS T40HF T70HF T85HF T110HF UNITS
I
F(AV)
40 70 85 110 A
T
C
85 85 85 85 °C
I
F(RMS)
63 110 134 173 A
I
FSM
50 Hz 570 1200 1700 2000
A
60 Hz 600 1250 1800 2100
I
2
t
50 Hz 1630 7100 14 500 20 500
A
2
s
60 Hz 1500 6450 13 500 18 600
I
2
t 16 300 70 700 148 700 204 300 A
2
s
V
RRM
100 to 1200 V
T
J
-40 to +150 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
MAXIMUM
AT T
J
= 25 °C
μA
VS-T40HF...
VS-T70HF...
VS-T85HF...
VS-T110HF...
10 100 150
100
20 200 300
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Dec-16
2
Document Number: 93587
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the
compound
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
T40HF T70HF T85HF T110HF
Maximum average forward
current at case temperature
I
F(AV)
180° conduction, half sine wave
40 70 85 110 A
85 85 85 85 °C
Maximum RMS forward current I
F(RMS)
63 110 134 173 A
Maximum peak, one-cycle
forward, non-repetitive surge
current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial T
J
=
T
J
maximum
570 1200 1700 2000
A
t = 8.3 ms 600 1250 1800 2100
t = 10 ms
100 % V
RRM
reapplied
480 1000 1450 1700
t = 8.3 ms 500 1050 1500 1780
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
1630 7100 14 500 20 500
A
2
s
t = 8.3 ms 1500 6450 13 500 18 600
t = 10 ms
100 % V
RRM
reapplied
1150 5000 10 500 14 500
t = 8.3 ms 1050 4570 9600 13 200
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 16 300 70 700 148 700 204 300 A
2
s
Low level value of threshold
voltage
V
F(TO)1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
),
T
J
maximum
0.66 0.76 0.68 0.68
V
High level value of threshold
voltage
V
F(TO)2
(I > x I
F(AV)
), T
J
maximum 0.84 0.95 0.90 0.86
Low level value of forward slope
resistance
r
f1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
),
T
J
maximum
4.3 2.4 1.76 1.56
m
High level value of forward slope
resistance
r
f2
(I > x I
F(AV)
), T
J
maximum 3.1 1.7 1.08 1.12
Maximum forward voltage drop V
FM
I
FM
= x I
F(AV)
, T
J
= 25 °C,
t
p
= 400 μs square pulse
Average power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
1.30 1.35 1.27 1.35 V
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS T40HF T70HF T85HF T110HF UNITS
Maximum peak reverse
leakage current
I
RRM
T
J
= 150 °C 15 15 20 20 mA
RMS isolation voltage V
ISOL
50 Hz, circuit to base, all terminals shorted
T
J
= 25 °C, t = 1 s
3500 3500 3500 3500 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
T40HF T70HF T85HF T110HF
Maximum junction operating
and storage temperature range
T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case per junction
R
thJC
DC operation 1.36 0.69 0.62 0.47
K/W
Maximum thermal resistance,
case to heatsink
R
thCS
Mounting surface smooth, flat
and greased
0.2
Mounting torque,
± 10 %
to heatsink
Non-lubricated
threads
M3.5 mounting screws
(1)
1.3 ± 10 %
Nm
terminals M5 screw terminals 3 ± 10 %
Approximate weight See dimensions - link at the end of datasheet 54 g
Case style D-55 (T-module)
VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Dec-16
3
Document Number: 93587
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM RECTANGULAR CONDUCTION AT T
J
MAXIMUM
UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
T40HF... 0.12 0.14 0.18 0.27 0.46 0.09 0.15 0.20 0.28 0.46
K/W
T70HF... 0.09 0.11 0.14 0.20 0.35 0.07 0.11 0.15 0.21 0.35
T85HF... 0.08 0.09 0.12 0.18 0.31 0.06 0.10 0.13 0.19 0.31
T110HF... 0.05 0.07 0.09 0.14 0.23 0.05 0.08 0.10 0.15 0.24
60
70
80
90
100
110
120
130
140
150
01020304050
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Avera ge Fo rwa rd Current (A )
T4 0 HF. . Se r i e s
R (DC) = 1.36 K/W
thJC
60
70
80
90
100
110
120
130
140
150
0 10203040506070
DC
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Period
Average Forward Current (A)
T4 0 HF. . Se r i e s
R (DC) = 1.36 K/W
thJC
0 255075100125150
Maximum Allowable Ambient TemperatureC)
R
=
0
.
5
K
/
W
-
D
e
lt
a
R
thS
A
1
K
/
W
1
.
5
K
/
W
2
K
/
W
3
K
/
W
5
K
/
W
7
K
/
W
1
0
K
/
W
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30 35 40
Average Forward Current (A)
RM S Li m i t
Maximum Average Forward Power Loss (W)
Conduc tion Angle
180°
120°
90°
60°
30°
T4 0 H F. . Se r i e s
T = 150°C
J

VS-T110HF20

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 200 Volt 110 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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