Vishay Siliconix
Si7478DP
Document Number: 72913
S09-0271-Rev. D, 16-Feb-09
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• New Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
• 100 % R
g
Tested
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
60
0.0075 at V
GS
= 10 V
20
0.0088 at V
GS
= 4.5 V
18.5
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerP AK SO-8
Bottom View
Ordering Information:
Si7478DP-T1-E3 (Lead (Pb)-free)
Si7478DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFE
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150°C)
a
T
A
= 25 °C
I
D
20 15
A
T
A
= 70 °C
16 12
Pulsed Drain Current
I
DM
60
Continuous Source Current (Diode Conduction)
a
I
S
4.5 1.6
Avalanche Current
I
AS
35
Avalanche Energy
E
AS
61 mJ
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
5.4 1.9
W
T
A
= 70 °C
3.4 1.2
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
18 23
°C/WSteady State 52 65
Maximum Junction-to-Case (Drain) Steady State
R
thJC
1.0 1.3