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STPS10L25G-TR

P1-P3P4-P6P7-P9P10-P12
October 2016
DocID3619 Rev 5
1/12
This is information on a product in full production.
www.st.com
STPS10L25
Low drop power Schottky rectifier
Datasheet - production data
Features
Very low forward voltage drop for less power
dissipation
Optimized conduction / reverse losses trade-
off which means the highest efficiency in the
applications
Avalanche capability specified
ECOPACK
®
2 compliant component for
D²PAK on demand
Description
Single Schottky rectifier suited to switched mode
power supplies and high frequency DC to DC
converters.
This device is especially intended for use as a
rectifier at the secondary of 3.3 V SMPS units.
Table 1: Device summary
Symbol
I
F(AV)
10 A
V
RRM
25 V
V
F
(typ.)
0.30 V
T
j
(max.)
150 °C
K
K
A
K
K
NC
NC
A
A
TO-220AC
D²PAK
A
K
Characteristics
STPS10L25
2/12
DocID3619 Rev 5
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
25
V
I
F(RMS)
Forward rms current
30
A
I
F(AV)
Average forward current
δ = 0.5 square wave
T
C
= 140 °C
10
A
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
200
A
P
ARM
Repetitive peak avalanche power
t
p
= 10 µs, T
j
= 125 °C
395
W
T
stg
Storage temperature range
-65 to +150
°C
T
j
Maximum operating junction temperature
(1)
150
Notes:
(1)
(dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
Parameter
Max .value
Unit
R
th(j-c)
Junction to case
1.5
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-
800
µA
T
j
= 125 °C
-
135
260
mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 10 A
-
0.46
V
T
j
= 125 °C
-
0.30
0.35
T
j
= 25 °C
I
F
= 20 A
-
0.55
T
j
= 125 °C
-
0.41
0.48
Notes:
(1)
Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the maximum conduction losses, use the following equation:
P = 0.22 x I
F(AV)
+ 0.013 x I
F
2
(RMS)
STPS10L25
Characteristics
DocID3619 Rev 5
3/12
1.1 Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current
Figure 2: Average forward current versus ambient
temperature (δ = 0.5)
Figure 3: Normalized avalanche power deratings
versus pulse duration (T
j
= 125 °C)
Figure 4: Relative variation of thermal impedance
junction to case versus pulse duration
Figure 5: Reverse leakage current versus reverse
voltage applied (typical values)
Figure 6: Junction capacitance versus reverse
voltage applied (typical values)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
T
δ
= tp/T
tp
0 1 2 3 4 5 6 7 8 9 10 11
PF
(AV)
(W)
IF
(AV)
(A)
0
2
4
6
8
10
12
R
th(j-a)
=50°C/W
R
th(j-a)
= R
th(j-c)
T
amb
(°C)
T
δ
= tp/T
tp
IF
(AV)
(A)
0 25 50 75 100 125 150
P (t
p
)
P (10 µs)
ARM
ARM
0.001
0.01
0.1
1
1 10 100 1000
t (µs)
p
1. 0E -4 1. 0E -3 1. 0E -2 1. 0E -1 1. 0E +0
0. 0
0. 2
0. 4
0. 6
0. 8
1. 0
T
=tp/T
tp
Z
th(j-c)
/R
th(j-c)
δ
δ = 0.1
δ = 0.5
δ = 0.2
Single pulse
t
p
(s)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
I
R
(mA)
T
j
= 125 °C
T
j
= 25 °C
T
j
= 150 °C
V
R
(V)
0 5 10 15 20 25
0.1
1.0
5.0
V
R
(V)
C(nF)
F = 1MHz
T
j
= 25 °C
1 2 5 10 20 30
P1-P3P4-P6P7-P9P10-P12

STPS10L25G-TR

Mfr. #:
Buy STPS10L25G-TR
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers LOW DROP POWER SCHOTTKY RECTIFIER
Lifecycle:
New from this manufacturer.
Delivery:
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