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MGA-31589-TR1G

P1-P3P4-P6P7-P9P10-P12P13-P13
MGA-31589
0.5 W High Gain Driver Amplier
Data Sheet
Description
Avago Technologies’ MGA-31589 is a 0.5 W, high Gain,
high performance Driver Amplier MMIC, housed in a
standard SOT-89 plastic package. The device required
simple matching components to achieve optimum per-
formance within specic 100 to 200 MHz bandwidth.
MGA-31589 is especially ideal for wireless infrastructure
applications that operate within the 450 MHz to 1.5 GHz
frequency range. With high IP3 and low noise gure, the
MGA-31589 may be utilized as a driver amplier in the
transmit chain and as second or third stage LNA in the re-
ceive chain. For optimum performance at higher frequen-
cy from 1.5 GHz to 3.0 GHz, MGA-31689 is recommended.
MGA-31589’s high gain and high linearity features are
achieved through the use of Avago Technologies’ propri-
etary 0.25 mm GaAs Enhancement-mode pHEMT process.
Pin connections and Package Marking
Note:
Top View: Package marking provides orientation and identication
“15” = Device Code
“X” = Date Code character indenties month of manufacturing
Features
• ROHS compliant
• Halogen free
• High linearity at low DC bias power
[1]
• High Gain
• Low noise gure
• High OIP3
• Advanced enhancement mode PHEMT Technology
• Excellent uniformity in product specication
• SOT-89 standard package
Specications
At 0.9 GHz, Vdd = 5 V, Idd = 146 mA (typical) at 25° C
• OIP3 = 45.3 dBm
• Noise Figure = 1.9 dB
• Gain = 20.4 dB
• P1dB = 27.2 dBm
• IRL = 14.0 dB, ORL = 11.6 dB
Note:
1. The MGA-31589 has a superior LFOM of 16. Linearity Figure of Merit
(LFOM) is essentially OIP3 divided by DC bias power.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 150 V
ESD Human Body Model = 650 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Figure 1. Simplied Schematic diagram
L
RF OUT
C
RF IN
VDD
C
C
C
C
C CL
MGA-31589
L
15X
Top View
RFin GND RFout
#1 #2 #3
Bottom View
RFout GND RFin
#3 #2 #1
2
MGA-31589 Absolute Maximum Rating
[1]
Symbol Parameter Units Absolute Max.
V
dd, max
Drain Voltage, RF output to ground V 5.5
P
d
Power Dissipation
(2)
mW 1050
P
in
CW RF Input Power dBm 17
T
j
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
Thermal Resistance
Thermal Resistance
[3]
(V
dd
= 5.0 V, I
dd
= 146 mA, T
c
= 85° C),
θ
jc
= 44° C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Source lead temperature is 25° C. Derate 22.7
mW/° C for T
L
>103.8° C.
3. Thermal resistance measured using 150° C
Infra-Red Microscopy Technique.
MGA-31589 Electrical Specication
[1]
T
C
= 25° C, Z
o
= 50 W, V
dd
= 5 V, unless specied.
Symbol Parameter and Test Condition
Frequency
(MHz) Units Min. Typ. Max.
I
ds
Quiescent Current NA mA 115 146 175
NF Noise Figure 700
900
dB 2.35
1.92 2.8
Gain Gain 700
900
dB
19.3
20.5
20.4 22.0
OIP3 Output Third Order Intercept Point 700
[2]
900
[2]
dBm
40.0
45.2
45.3
P1dB Output Power at 1 dB Gain Compression 700
900
dBm
26.3
26.4
27.2
PAE Power Added Eciency at P1dB 700
900
% 43.6
45.0
IRL Input Return Loss 700
900
dB 20.0
14.0
ORL Output Return Loss 700
900
dB 10.4
11.6
ISOL Isolation 700
900
dB 28.0
27.5
Note :
1. Measurements obtained from a test circuit described in Figure 27.
2. OIP3 test condition: F1 - F2 = 1.0 MHz, with input power of -8 dBm per tone measured at worst case side band.
3
100 120 140 160 180
26
27 28
20 21 22 1.5 2.5 321
40 45 50 55
LSL LSLUSL
LSL USL USL
LSL
MGA-31589 Consistency Distribution Chart
[1,2]
Notes:
1. Data sample size is 2500 samples taken from 5 wafers and 3 dierent
wafer lots. Future wafers allocated to this product may have nominal
values anywhere between the upper and lower limits.
2. Measurements are made on production test board which represents
a trade o between nominal Gain, NF, OIP3, and OP1dB. Circuit losses
have been de-embedded from actual measurements.
Figure 6. OIP3 at 900 MHz, Vdd = 5 V, LSL = 40.0 dBm, Nominal = 45.3 dBm
Figure 2. Idd at Vdd = 5 V, LSL = 115 mA , Nominal = 146 mA, USL = 175 mA
Figure 4. Gain at 900 MHz, Vdd = 5 V, LSL = 19.3 dB, Nominal = 20.4 dB,
USL = 22.0 dB
Figure 3. OP1dB at 900 MHz, Vdd = 5 V, LSL= 26.3 dBm, Nominal = 27.2 dBm
Figure 5. NF at 900 MHz, Vdd = 5 V, Nominal = 1.92 dB, USL = 2.8 dB
P1-P3P4-P6P7-P9P10-P12P13-P13

MGA-31589-TR1G

Mfr. #:
Buy MGA-31589-TR1G
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier 0.4-1.5GHz High Gain Driver Amplifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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