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MMDF3N02HDR2

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 8
1 Publication Order Number:
MMDF3N02HD/D
MMDF3N02HD
Power MOSFET
3 Amps, 20 Volts
N−Channel SO−8, Dual
These miniature surface mount MOSFETs feature ultra low R
DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time. These
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc−dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Features
• Ultra Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I
DSS
Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
• This is a Pb−Free Device
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 Vdc
Drain−to−Gate Voltage (R
GS
= 1.0 MW)
V
DGR
20 Vdc
Gate−to−Source Voltage − Continuous V
GS
± 20 Vdc
Drain Current − Continuous @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 100°C
Drain Current − Single Pulse (t
p
≤ 10 ms)
I
D
I
D
I
DM
3.8
2.6
19
Adc
Apk
Total Power Dissipation @ T
A
= 25°C (Note 1) P
D
2.0 W
Operating and Storage Temperature Range T
J
, T
stg
− 55 to 150 °C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C (V
DD
= 20 Vdc,
V
GS
= 5.0 Vdc, Peak I
L
= 9.0 Apk,
L = 10 mH, R
G
= 25 W)
E
AS
405 mJ
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
62.5 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with
one die operating, 10 sec. max.
Source−1
1
2
3
4
8
7
6
5
Gate−1
Source−2
Gate−2
Drain−1
Drain−1
Drain−2
Drain−2
3 AMPERES, 20 VOLTS
R
DS(on)
= 90 mW
Device Package Shipping
†
ORDERING INFORMATION
N−Channel
PIN ASSIGNMENT
D
S
G
http://onsemi.com
MMDF3N02HDR2G SO−8
(Pb−Free)
2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SO−8, DUAL
CASE 751
STYLE 11
MARKING
DIAGRAM
D3N02 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
D3N02
AYWWG
G
1
8
1
8
MMDF3N02HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
20
−
−
29
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0) I
GSS
− − 100 nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.5
4.0
2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance
(V
GS
= 10 Vdc, I
D
= 3.0 Adc)
(V
GS
= 4.5 Vdc, I
D
= 1.5 Adc)
R
DS(on)
−
−
0.058
0.074
0.090
0.100
W
Forward Transconductance (V
DS
= 3.0 Vdc, I
D
= 1.5 Adc) g
FS
2.0 3.88 − Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 16 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 455 630 pF
Output Capacitance
C
oss
− 184 250
Transfer Capacitance
C
rss
− 45 90
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
(V
DD
= 10 Vdc, I
D
= 3.0 Adc,
V
GS
= 4.5 Vdc, R
G
= 6.0 W)
t
d(on)
− 11 22
ns
Rise Time t
r
− 58 116
Turn−Off Delay Time t
d(off)
− 17 35
Fall Time t
f
− 20 40
Turn−On Delay Time
(V
DD
= 10 Vdc, I
D
= 3.0 Adc,
V
GS
= 10 Vdc, R
G
= 6.0 W)
t
d(on)
− 7.0 21
Rise Time t
r
− 32 64
Turn−Off Delay Time t
d(off)
− 27 54
Fall Time t
f
− 21 42
Gate Charge
See Figure 8
(V
DS
= 16 Vdc, I
D
= 3.0 Adc,
V
GS
= 10 Vdc)
Q
T
− 12.5 18
nC
Q
1
− 1.3 −
Q
2
− 2.8 −
Q
3
− 2.4 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 2) (I
S
= 3.0 Adc, V
GS
= 0 Vdc)
(I
S
= 3.0 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
−
−
0.79
0.72
1.3
−
Vdc
Reverse Recovery Time
See Figure 15
(I
S
= 3.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
t
rr
− 23 −
ns
t
a
− 18 −
t
b
− 5.0 −
Reverse Recovery Stored Charge Q
RR
− 0.025 −
mC
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
MMDF3N02HD
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
3.9 V
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (OHMS)
0
2
4
6
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
1 1.4 1.8 3.4
0
2
4
6
I
D
, DRAIN CURRENT (AMPS)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
01234 10
0
0.2
0.4
0.6
01234 6
0.05
0.06
0.07
0.08
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
0.6
1
1.2
1.4
1.6
048 20
1
100
1000
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
I
DSS
, LEAKAGE (nA)
V
DS
≥ 10 V
T
J
= 100°C
25°C
-55°C
T
J
= 25°C
V
GS
= 0 V
I
D
= 1.5 A
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
I
D
= 1.5 A
2.2 2.6 3
5 6 789 5
10 V
-50 -25 0 25 50 75 100 125 150
T
J
= 125°C
0.8
10
12 16
25°C
100°C
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.2 0.4 0.6 0.8 1.41 1.2
1.6 1.8 2
1
3.7 V
3.1 V
2.7 V
2.9 V
V
GS
= 10 V
3.3 V
3.5 V
2.5 V
4.5 V
T
J
= 25°C
5
3
P1-P3P4-P6P7-P8

MMDF3N02HDR2

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Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 3A N-Channel
Lifecycle:
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