NLV74HC244ADWR2G

© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 15
1 Publication Order Number:
MC74HC244A/D
MC74HC244A
Octal 3-State Noninverting
Buffer/Line Driver/
Line Receiver
High−Performance Silicon−Gate CMOS
The MC74HC244A is identical in pinout to the LS244. The device
inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LSTTL outputs.
This octal noninverting buffer/line driver/line receiver is designed
to be used with 3−state memory address drivers, clock drivers, and
other bus−oriented systems. The device has noninverting outputs and
two active−low output enables.
The HC244A is similar in function to the HC240A.
Features
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1 mA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7 A
Chip Complexity: 136 FETs or 34 Equivalent Gates
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
LOGIC DIAGRAM
DATA
INPUTS
A1
A2
A3
A4
B1
B2
B3
B4
17
15
13
11
8
6
4
218
16
14
12
9
7
5
3
YB4
YB3
YB2
YB1
YA4
YA3
YA2
YA1
NONINVERTING
OUTPUTS
PIN 20 = V
CC
PIN 10 = GND
OUTPUT
ENABLES
ENABLE A
ENABLE B
1
19
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See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1
20
MARKING DIAGRAMS
SOIC−20
DW SUFFIX
CASE 751D
HC244A
AWLYYWWG
HC
244A
ALYWG
G
TSSOP−20
DT SUFFIX
CASE 948E
20
1
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G or G = Pb−Free Package
(*Note: Microdot may be in either location)
SOIC−20 TSSOP−20
PIN ASSIGNMENT
A3
A2
YB4
A1
ENABLE A
GND
YB1
A4
YB2
YB3 5
4
3
2
1
10
9
8
7
6
14
15
16
17
18
19
20
11
12
13
YA2
B4
YA1
ENABLE B
V
CC
B1
YA4
B2
YA3
B3
FUNCTION TABLE
Inputs Outputs
Enable A,
Enable B A, B YA, YB
LLL
LHH
HXZ
Z = high impedance
MC74HC244A
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Referenced to GND) –0.5 to +7.0 V
V
in
DC Input Voltage (Referenced to GND) –0.5 to V
CC
+ 0.5 V
V
out
DC Output Voltage (Referenced to GND) –0.5 to V
CC
+ 0.5 V
I
in
DC Input Current, per Pin ±20 mA
I
out
DC Output Current, per Pin ±35 mA
I
CC
DC Supply Current, V
CC
and GND Pins ±75 mA
I
IK
Input Clamp Current (V
I
< 0 or V
I
> V
CC
) ±20 mA
I
OK
Output Clamp Current (V
O
< 0 or V
O
> V
CC
) ±20 mA
P
D
Power Dissipation in Still Air, SOIC Package†
TSSOP Package†
500
450
mW
T
stg
Storage Temperature –65 to +150
_C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(SOIC, SSOP or TSSOP Package)
260
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
Derating: SOIC Package: –7 mW/_C from 65_ to 125_C
TSSOP Package: −6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 2.0 6.0 V
V
in
, V
out
DC Input Voltage, Output Voltage (Referenced to GND) 0 V
CC
V
T
A
Operating Temperature, All Package Types –55 +125
_C
t
r
, t
f
Input Rise and Fall Time V
CC
= 2.0 V
(Figure 1) V
CC
= 4.5 V
V
CC
= 6.0 V
0
0
0
1000
500
400
ns
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND v (V
in
or V
out
) v V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
MC74HC244A
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3
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol Parameter Test Conditions
V
CC
V
–55 to
25_C
v 85_C v 125_C
Unit
V
IH
Minimum High−Level Input Voltage V
out
= V
CC
– 0.1 V
|I
out
| v 20 mA
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
V
IL
Maximum Low−Level Input Voltage V
out
= 0.1 V
|I
out
| v 20 mA
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
V
OH
Minimum High−Level Output
Voltage
V
in
= V
IH
|I
out
| v 20 mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
V
in
= V
IH
|I
out
| v 2.4 mA
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.2
3.7
5.2
V
OL
Maximum Low−Level Output
Voltage
V
in
= V
IL
|I
out
| v 20 mA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
in
= V
IL
|I
out
| v 2.4 mA
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4
I
in
Maximum Input Leakage Current V
in
= V
CC
or GND 6.0 ±0.1 ±1.0 ±1.0
mA
I
OZ
Maximum Three−State Leakage
Current
Output in High−Impedance State
V
in
= V
IL
or V
IH
V
out
= V
CC
or GND
6.0 ±0.5 ±5.0 ±10
mA
I
CC
Maximum Quiescent Supply Cur-
rent (per Package)
V
in
= V
CC
or GND
I
out
= 0 mA
6.0 4.0 40 160
mA
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6 ns)
Symbo
l
Parameter
V
CC
V
Guaranteed Limit
Unit
–55 to
25_C
v85_C v125_C
t
PLH
,
t
PHL
Maximum Propagation Delay, A to YA or B to YB
(Figures 1 and 3)
2.0
3.0
4.5
6.0
96
50
18
15
115
60
23
20
135
70
27
23
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay, Output Enable to YA or YB
(Figures 2 and 4)
2.0
3.0
4.5
6.0
110
60
22
19
140
70
28
24
165
80
33
28
ns
t
PZL
,
t
PZH
Maximum Propagation Delay, Output Enable to YA or YB
(Figures 2 and 4)
2.0
3.0
4.5
6.0
110
60
22
19
140
70
28
24
165
80
33
28
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
3.0
4.5
6.0
60
23
12
10
75
27
15
13
90
32
18
15
ns
C
in
Maximum Input Capacitance 10 10 10 pF
C
out
Maximum Three−State Output Capacitance
(Output in High−Impedance State)
15 15 15 pF
C
PD
Power Dissipation Capacitance (Per Buffer)*
Typical @ 25°C, V
CC
= 5.0 V
pF
34
* Used to determine the no−load dynamic power consumption: P
D
= C
PD
V
CC
2
f + I
CC
V
CC
.

NLV74HC244ADWR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Encoders, Decoders, Multiplexers & Demultiplexers LOG CMOS BUS INTRFCE
Lifecycle:
New from this manufacturer.
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