TIP29AG

© Semiconductor Components Industries, LLC, 2014
November, 2014 Rev. 13
1 Publication Order Number:
TIP29B/D
TIP29, A, B, C (NPN),
TIP30, A, B, C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications. Compact TO220 package.
Features
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector Emitter Voltage
TIP29G, TIP30G
TIP29AG, TIP30AG
TIP29BG, TIP30BG
TIP29CG, TIP30CG
V
CEO
40
60
80
100
Vdc
Collector Base Voltage
TIP29G, TIP30G
TIP29AG, TIP30AG
TIP29BG, TIP30BG
TIP29CG, TIP30CG
V
CB
40
60
80
100
Vdc
Emitter Base Voltage V
EB
5.0 Vdc
Collector Current Continuous I
C
1.0 Adc
Collector Current Peak I
CM
3.0 Adc
Base Current I
B
0.4 Adc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
30
0.24
W
W/°C
Total Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
2.0
0.016
W
W/°C
Unclamped Inductive Load Energy
(Note 1)
E 32 mJ
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to + 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. This rating based on testing with L
C
= 20 mH, R
BE
= 100 W, V
CC
= 10 V,
I
C
= 1.8 A, P.R.F = 10 Hz
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoAmbient
R
q
JA
62.5 °C/W
Thermal Resistance, JunctiontoCase
R
q
JC
4.167 °C/W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO220
CASE 221A
STYLE 1
MARKING DIAGRAM
1 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40, 60, 80, 100 VOLTS,
80 WATTS
www.onsemi.com
1
2
3
4
TIPxxx = Device Code:
29, 29A, 29B, 29C
30, 30A, 30B, 30C
A = Assembly Location
Y = Year
WW = Work Week
G=PbFree Package
TIPxxxG
AYWW
See detailed ordering and shipping information on page 4 of
this data sheet.
ORDERING INFORMATION
1
BASE
3
EMITTER
COLLECTOR
2,4
1
BASE
3
EMITTER
COLLECTOR
2,4
PNP NPN
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(I
C
= 30 mAdc, I
B
= 0) (Note 2)
TIP29G, TIP30G
TIP29AG, TIP30AG
TIP29BG, TIP30BG
TIP29CG, TIP30CG
V
CEO(sus)
40
60
80
100
Vdc
Collector Cutoff Current
(V
CE
= 30 Vdc, I
B
= 0)
TIP29G, TIP29AG, TIP30G, TIP30AG
(V
CE
= 60 Vdc, I
B
= 0)
TIP29BG, TIP29CG, TIP30BG, TIP30CG
I
CEO
0.3
0.3
mAdc
Collector Cutoff Current
(V
CE
= 40 Vdc, V
EB
= 0)
TIP29G, TIP30G
(V
CE
= 60 Vdc, V
EB
= 0)
TIP29AG, TIP30AG
(V
CE
= 80 Vdc, V
EB
= 0)
TIP29BG, TIP30BG
(V
CE
= 100 Vdc, V
EB
= 0)
TIP29CG, TIP30CG
I
CES
200
200
200
200
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
1.0
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 0.2 Adc, V
CE
= 4.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 4.0 Vdc)
h
FE
40
15
75
CollectorEmitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 125 mAdc)
V
CE(sat)
0.7
Vdc
BaseEmitter On Voltage
(I
C
= 1.0 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
1.3
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (Note 3)
(I
C
= 200 mAdc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
f
T
3.0
MHz
SmallSignal Current Gain
(I
C
= 0.2 Adc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
3. f
T
= h
fe
⎪• f
test
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
www.onsemi.com
3
0.03
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
0.03
h
FE
, DC CURRENT GAIN
0.5
5.0
70
3.0
100
7.0
300
30
0.1
0.3
0.07 1.0
T
J
= 150°C
25°C
-55°C
V
CE
= 2.0 V
500
10
50
3.0
t, TIME (s)μ
Figure 2. TurnOff Time
I
C
, COLLECTOR CURRENT (AMP)
I
B1
= I
B2
I
C
/I
B
= 10
t
s
= t
s
- 1/8 t
f
T
J
= 25°C
t
s
TURN-ON PULSE
APPROX
+11 V
V
in
0
V
EB(off)
t
1
APPROX
+11 V
V
in
t
2
TURN-OFF PULSE
t
3
t
1
7.0 ns
100 < t
2
< 500 ms
t
3
< 15 ns
DUTY CYCLE 2.0%
APPROX -9.0 V
R
B
and R
C
VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
SCOPE
R
C
R
B
V
CC
V
in
C
jd
<< C
eb
-4.0 V
Figure 3. Switching Time Equivalent Circuit
0.03
Figure 4. TurnOn Time
I
C
, COLLECTOR CURRENT (AMP)
0.02
0.1 3.0
0.07
1.0
1.0
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 10 V
t, TIME (s)μ
0.5
0.3
0.1
0.05
0.05 0.3 0.5
t
d
@ V
EB(off)
= 2.0 V
0.03
0.7
2.0
0.07 0.7
t
r
@ V
CC
= 30 V
0.05 0.7
t
f
@ V
CC
= 10 V
t
f
@ V
CC
= 30 V
0.07
1.0
0.5
0.3
0.1
0.05
0.03
0.7
2.0
0.2
0.1 3.01.00.05 0.3 0.50.07 0.7 2.00.2
Figure 5. Active Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE, (VOLTS)
10
0.1
10
SECOND BREAKDOWN LIMITED
THERMALLY LIMITED @ T
C
= 25°C
BONDING WIRE LIMITED
I
C
, COLLECTOR CURRENT (AMPS)
1.0 20 10
0
40
3.0
4.0
0.1
TIP29, 30
TIP29A, 30A
TIP29B, 30B
TIP29C, 30C
T
J
= 150°C
CURVES APPLY BELOW
RATED V
CEO
1 ms
dc
5 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150°C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

TIP29AG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 1A 60V 30W NPN
Lifecycle:
New from this manufacturer.
Delivery:
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