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2SC1741STPQ

P1-P3P4-P4
2SC4097
Transistors
Rev.A 1/3
Medium Power Transistor (32V, 0.5A)
2SC4097
zFeatures
1) High I
CMax.
I
CMax. = 0.5A
2) Low V
CE(sat).
Optimal for low voltage operation.
3) Complements the 2SA1577.
zStructure
Epitaxial planar type
NPN silicon transistor
zExternal dimensions (Units : mm)
2SC4097
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
0 ~ 0.1
(2)(1)
(3)
0.1 ∼ 0.4
2.1±0.1
1.25±0.1
0.9±0.1
0.2
0.7±0.1
0.15±0.05
0.3
2.0±0.2
1.3±0.1
0.65 0.65
+0.1
−0
Abbreviated symbol : C∗
All terminals have same dimensions
∗
Denotes h
FE
zAbsolute maximum ratings (Ta = 25°C)
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
40 V
V
V
A
W
°C
°C
32
5
0.5
∗
I
C
0.2
150
−55 to +150
Symbol Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
P
C
must not be exceeded.
∗
2SC4097
Transistors
Rev.A 2/3
zElectrical characteristics (Ta = 25°C)
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
40
32
5
−
−
120
−
−
−
−
−
−
−
−
−
−
250
6.5
−
−
−
1
1
390
0.6
−
−
VI
C
=
100µA
I
C
=
1mA
I
E
=
100µA
V
CB
=
20V
V
EB
=
4V
V
CE
=
3V, I
C
=
10mA
I
C
/I
B
= 5
00mA/50mA
V
CE
=
5V, I
E
=
−20mA, f
=
100MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
V
V
µA
µA
−
V
MHz
pF
Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
zPackaging Specifications and h
FE
T106
3000
h
FE
QR
2SC4097
Type
Package
Code
Taping
Basic ordering unit (pieces)
h
FE values are classified as follows:
Item Q R
h
FE
120 to 270 180 to 390
zElectrical characteristic curves
0.80.2 0.4 0.90.70.5 1.10.3 1.00.6
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
Ta=100°C
−25°C
80°C
25°C
−55°C
V
CE
=6V
COLLECTOR CURRENT : I
C
(
mA)
BASE TO EMITTER VOLTAGE : V
BE
(
V)
Fig.1 Grounded emitter propagation
characteristics
10 2345
0
100
50
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
I
B=
0A
Ta
=
25
°C
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(
V)
Fig.2 Grounded emitter output
characteristics ( Ι )
10 2345
0
500
400
300
200
100
2mA
1.8mA
1.6mA
1.4mA
1.2mA
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
I
B
=0A
Ta=25°C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.3 Grounded emitter output
characteristics( ΙΙ )
2SC4097
Transistors
Rev.A 3/3
0.5 1 2 5 10 20 50 100 1000200 500
0.2
0.5
1
0.02
0.05
0.1
Ta
=25
°C
Ta
lC/lB=10
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR CURRENT : IC
(mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
500 10000.1 200100.2 50 1000.5 2012 5
20
10
50
100
200
500
1000
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(
mA)
Ta
=
100
°C
75
°C
50
°
C
25
°C
0
°C
−25
°
C
−
50
°C
V
CE=
3V
Fig.5 DC current gain vs. collector current
Fig. 6 Gain bandwidth product vs.
emitter current
EMITTER CURRENT : I
E
(
mA)
TRANSITION FREQUENCY : f
T
(
MHz)
Ta
=
25
°C
V
CE
=
5V
−0.5 −1 −2 −5 −10 −20 −50
50
100
200
500
0.5 1 2 5 10 20 50
5
2
10
20
50
Cib
Cob
Ta=25°C
f
=
1MHz
I
E
=0A
I
C
=0A
COLLECTOR TO BASE VOLTAGE : V
CB (
V)
EMITTER TO BASE VOLTAGE : V
EB (
V)
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE : Cib
(pF)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
P1-P3P4-P4

2SC1741STPQ

Mfr. #:
Buy 2SC1741STPQ
Manufacturer:
ROHM Semiconductor
Description:
Bipolar Transistors - BJT TRANS GP BJT NPN 32V 0.5A 3PIN
Lifecycle:
New from this manufacturer.
Delivery:
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