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VS-19TQ015S-M3

P1-P3P4-P6P7-P7
VS-19TQ015S-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-16
1
Document Number: 95730
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 19 A
FEATURES
• 125 °C T
J
operation (V
R
< 5 V)
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC
®
-JESD47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-19TQ015S-M3 Schottky rectifier has been
optimized for ultralow forward voltage drop specifically for
the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
PRODUCT SUMMARY
Package TO-263AB (D
2
PAK)
I
F(AV)
19 A
V
R
15 V
V
F
at I
F
0.36 V
I
RM
max. 522 mA at 100 °C
T
J
max. 125 °C
Diode variation Single die
E
AS
6.75 mJ
Anode
1
3
Base
cathode
2
N/C
TO-263AB (D
2
PAK)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 19 A
V
RRM
15 V
I
FSM
t
p
= 5 μs sine 700 A
V
F
19 A
pk
, T
J
= 75 °C 0.32 V
T
J
Range -55 to +125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-19TQ015S-M3 UNITS
Maximum DC reverse voltage V
R
15 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 80 °C, rectangular waveform 19 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
700
A
10 ms sine or 6 ms rect. pulse 330
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1.50 A, L = 6 mH 6.75 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 3 x V
R
typical
1.50 A
VS-19TQ015S-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-16
2
Document Number: 95730
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
19 A
T
J
= 25 °C
0.36
V
38 A 0.46
19 A
T
J
= 75 °C
0.32
38 A 0.43
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 100 °C, V
R
= 12 V 465
mA
T
J
= 100 °C, V
R
= 5 V 285
T
J
= 25 °C
V
R
= Rated V
R
10.5
T
J
= 100 °C 522
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 2000 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
-55 to +125
°C
Maximum storage temperature range T
Stg
-55 to +150
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
1.50
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D
2
PAK 19TQ015S
1
10
100
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0 0.4 0.6 1.0 1.2 1.4
1000
0.1
0.2 0.8
T
J
= 100 °C
T
J
= 75 °C
T
J
= 25 °C
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
05 15
0.1
1
10
100
10
1000
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
VS-19TQ015S-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-16
3
Document Number: 95730
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
01015
20
25
100
1000
5
30
T
J
= 25 °C
10 000
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
03010
80
85
95
105
51520
90
100
19TQ015
R
thJC
(DC) = 1.50 °C/W
DC
25
0
4
10
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
828
6
2
4
8
12
16 20
24
RMS limit
DC
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
P1-P3P4-P6P7-P7

VS-19TQ015S-M3

Mfr. #:
Buy VS-19TQ015S-M3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Lifecycle:
New from this manufacturer.
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