74HC00D

74HC00D
1
CMOS Digital Integrated Circuits Silicon Monolithic
74HC00D
74HC00D
74HC00D
74HC00D
Start of commercial production
2016-03
1.
1.
1.
1. Functional Description
Functional Description
Functional Description
Functional Description
Quad 2-Input NAND Gate
2.
2.
2.
2. General
General
General
General
The 74HC00D is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power
dissipation.
The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and
stable output.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3.
3.
3.
3. Features
Features
Features
Features
(1) High speed: t
pd
= 6 ns (typ.) at V
CC
= 5 V
(2) Low power dissipation: I
CC
= 1.0 µA (max) T
a
= 25
(3) Balanced propagation delays: t
PLH
t
PHL
(4) Wide operating voltage range: V
CC(opr)
= 2.0 to 6.0 V
4.
4.
4.
4. Packaging
Packaging
Packaging
Packaging
SOIC14
2016-08-04
Rev.3.0
©2016 Toshiba Corporation
74HC00D
2
5.
5.
5.
5. Pin Assignment
Pin Assignment
Pin Assignment
Pin Assignment
6.
6.
6.
6. Marking
Marking
Marking
Marking
7.
7.
7.
7. IEC Logic Symbol
IEC Logic Symbol
IEC Logic Symbol
IEC Logic Symbol
2016-08-04
Rev.3.0
©2016 Toshiba Corporation
74HC00D
3
8.
8.
8.
8. Truth Table
Truth Table
Truth Table
Truth Table
A
L
L
H
H
B
L
H
L
H
Y
H
H
H
L
9.
9.
9.
9. Absolute Maximum Ratings (Note)
Absolute Maximum Ratings (Note)
Absolute Maximum Ratings (Note)
Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Note
(Note 1)
Rating
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±20
±20
±25
±50
500
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: P
D
derates linearly with -8 mW/ above 85
10.
10.
10.
10. Operating Ranges (Note)
Operating Ranges (Note)
Operating Ranges (Note)
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Inputriseandfalltimes
Symbol
V
CC
V
IN
V
OUT
T
opr
t
r
,t
f
Test Condition
Rating
2.0 to 6.0
0 to V
CC
0 to V
CC
-40 to 125
0 to 50
Unit
V
V
V
µs
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
2016-08-04
Rev.3.0
©2016 Toshiba Corporation

74HC00D

Mfr. #:
Manufacturer:
Description:
NAND Gate 4-Element 2-IN CMOS 14-Pin SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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