©2002 Fairchild Semiconductor Corporation RFG45N06, RFP45N06, RF1S45N06SM Rev. B
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves Unless Otherwise Specified (Continued)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
300
100
10
1
0.01 0.1 1 10
t
AV ,
TIME IN AVALANCHE (ms)
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R ≠ 0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
I
AS,
AVALANCHE CURRENT (A)
125
100
75
50
25
0
0 1.5 3 4.5 6 7.5
I
D
, DRAIN CURRENT (A)
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 10V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
PULSE DURATION = 80µs
T
C
= 25
o
C
V
GS
= 8V
DUTY CYCLE = 0.5% MAX
012345678910
V
GS
,
GATE TO SOURCE VOLTAGE (V)
I
DS(ON)
,
DRAIN TO SOURCE CURRENT (A)
125
100
75
50
25
0
PULSE DURATION = 80µs
25
o
C
-55
o
C
175
o
C
V
DD
= 15V
DUTY CYCLE = 0.5% MAX
2.5
2
1.5
1
0.5
0
-80 -40 0 40 80 120 160 200
NORMALIZED DRAIN TO SOURCE
T
J,
JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80µs
V
GS
= 10V, I
D
= 45A
ON RESISTANCE
DUTY CYCLE = 0.5%MAX
2.0
1.5
1.0
0.5
0
-80 -40 0 40 80 160120 200
THRESHOLD VOLTAGE
T
J,
JUNCTION TEMPERATURE (
o
C)
NORMALIZED GATE
V
GS
= V
DS
, I
D
= 250µA
2.0
1.5
1.0
0.5
0
-80 -40 0 40 80 120 160 200
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
T
J,
JUNCTION TEMPERATURE (
o
C)
I
D
= 250µA
RFG45N06, RFP45N06, RF1S45N06SM
