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VSSB420S-M3/5BT

P1-P3P4-P4
VSSB420S-M3
www.vishay.com
Vishay General Semiconductor
Revision: 31-Mar-15
1
Document Number: 89317
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, freewheeling diodes,
DC/DC converters and polarity protection applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS-compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1)
Units mounted on PCB with 20 mm x 20 mm pad areas
(2)
Free air, mounted on recommended PCB 1 oz. pad area
PRIMARY CHARACTERISTICS
I
F(AV)
4.0 A
V
RRM
200 V
I
FSM
40 A
V
F
at I
F
= 4.0 A 0.71 V
T
J
max. 150 °C
Package DO-214AA (SMB)
Diode variation Single die
DO-214AA (SMB)
TMBS
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSB420S UNIT
Device marking code V4D
Maximum repetitive peak reverse voltage V
RRM
200 V
Maximum DC forward current
I
F
(1)
4.0
A
I
F
(2)
1.8
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
40 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
VSSB420S-M3
www.vishay.com
Vishay General Semiconductor
Revision: 31-Mar-15
2
Document Number: 89317
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Notes
(1)
Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R
JA
- junction to ambient
(2)
Units mounted on PCB with 20 mm x 20 mm copper pad areas; thermal resistance R
JM
- junction to mount
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage I
F
= 4.0 A
T
A
= 25 °C
V
F
(1)
1.44 1.90
V
T
A
= 125 °C 0.71 0.80
Reverse current per diode
V
R
= 180 V
T
A
= 25 °C
I
R
(2)
3-μA
T
A
= 125 °C 0.7 - mA
V
R
= 200 V
T
A
= 25 °C 4 150 μA
T
A
= 125 °C 1.1 10 mA
Typical junction capacitance 4.0 V, 1 MHz C
J
120 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSB420S UNIT
Typical thermal resistance
R
JA
(1)
120
°C/W
R
JM
(2)
15
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
VSSB420S-M3/52T 0.096 52T 750 7" diameter plastic tape and reel
VSSB420S-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel
0
25
50
75
100
125
5.0
150
T
M
- Mount Temperature (°C)
Average Forward Rectified Current (A)
2.5
2.0
1.5
0.5
0
1.0
T
M
Measured at Terminal
3.0
4.0
3.5
4.5
0
4.4
0
4
Average Forward Current (A)
Average Power Loss (W)
1.5
1.0
0.5
4.0
3.6
3.2
2.8
2.4
2.0
0.4
D = t
p
/T t
p
T
D = 0.1
D = 0.5
D = 0.8
D = 1.0
3.5
3.0
2.5
2.0
D = 0.3
D = 0.2
1.6
1.2
0.8
VSSB420S-M3
www.vishay.com
Vishay General Semiconductor
Revision: 31-Mar-15
3
Document Number: 89317
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
1
100
0
0.1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 150 °C
10
0.2
0.4
0.6
0.8
1.0
1.2
1.61.4
10
20
40
60
0.00001
0.0001
0.001
0.01
0.1
10
80
100
Percent of Rated Peak Reverse Voltage (%)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 150 °C
30
50
70
90
Instantaneous Reverse Current (mA)
1
100
10
10
100
1000
0.1
1
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
100
10
1
100
1000
0.01
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
10
0.1
Junction to Ambient
0.012 (0.305)
0.006 (0.152)
0.008
(0.2)
0.180 (4.57)
0.160 (4.06)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.096 (2.44)
0.084 (2.13)
DO-214AA (SMB)
0 (0)
Cathode Band
0.085 (2.159)
MAX.
0.220 REF.
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
Mounting Pad Layout
P1-P3P4-P4

VSSB420S-M3/5BT

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Buy VSSB420S-M3/5BT
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 4A,200V,TRENCH SKY RECT.
Lifecycle:
New from this manufacturer.
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