© 2000 IXYS All rights reserved
1 - 2
Features
●
International standard package
with DCB ceramic base plate
●
Planar passivated chips
●
Short recovery time
●
Low switching losses
●
Soft recovery behaviour
●
Isolation voltage 3600 V~
●
UL registered E 72873
Applications
●
Antiparallel diode for high frequency
switching devices
●
Free wheeling diode in converters
and motor control circuits
●
Inductive heating and melting
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
●
Low losses
① I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.6 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
0.85
1.09
75 726
75 514
2680
3000
3600
-40...+150
-40...+125
110
115200
117100
93300
94800
4800
5280
4320
4750
150
12.7
9.6
50
2.25-2.75/20-25
4.50-5.50/40-48
300 1.17
1.36
520 1.41
1.52
0.114
0.071
24
6
160
Preliminary data
Dimensions in mm (1 mm = 0.0394")
600 250 300
300 88
800 132
V
RSM
V
RRM
Type
V V
600 600 MEO 500-06DA
Symbol Test Conditions Maximum Ratings
I
FRMS
T
C
= °CA
I
FAVM
① T
C
= °C; rectangular, d = 0.5 A
I
FRM
t
P
< 10 ms; rep. rating, pulse width limited by T
VJM
A
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms (60 Hz), sine A
T
VJ
= 150°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms (60 Hz), sine A
I
2
t T
VJ
= 45°C; t = 10 ms (50 Hz), sine A
2
s
t = 8.3 ms (60 Hz), sine A
2
s
T
VJ
= 150°C; t = 10 ms (50 Hz), sine A
2
s
t = 8.3 ms (60 Hz), sine A
2
s
T
VJ
°C
T
stg
°C
T
Smax
°C
P
tot
T
C
= 25°CW
V
ISOL
50/60 Hz, RMS t = 1 min V~
I
ISOL
£ 1 mA t = 1 s V~
M
d
Mounting torque (M6) Nm/lb.in.
Terminal connection torque (M6) Nm/lb.in.
d
S
Creeping distance on surface mm
d
A
Strike distance through air mm
a Maximum allowable acceleration m/s
2
Weight g
Symbol Test Conditions Characteristic Values (per diode)
typ. max.
I
R
T
VJ
= 25°CV
R
= V
RRM
mA
T
VJ
= 25°CV
R
= 0.8 • V
RRM
mA
T
VJ
= 125°CV
R
= 0.8 • V
RRM
mA
V
F
I
F
= A; T
VJ
=125°CV
T
VJ
=25°CV
I
F
= A; T
VJ
=125°CV
T
VJ
=25°CV
V
T0
For power-loss calculations only V
r
T
mW
R
thJH
DC current K/W
R
thJC
DC current K/W
t
rr
I
F
= A T
VJ
= 100°Cns
I
RM
V
R
= V T
VJ
= 25°CA
-di/dt = A/msT
VJ
= 100°CA
1750
749
3 1
Fast Recovery
Epitaxial Diode
(FRED) Module
MEO 500-06 DA V
RRM
= 600 V
I
FAVM
= 514 A
t
rr
= 250 ns
3
1
