FSCM0765R
4
(Ta=25°C, unless otherwise specified.)
Notes:
1. T
j
= 25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
.
Thermal Impedance
Note:
1. Free standing with no heat-sink under natural convection
2. Infinite cooling condition - Refer to the SEMI G30-88.
Parameter Symbol Value Unit
Drain-Source (GND) Voltage
(1)
V
DSS
650 V
Drain-Gate Voltage (R
GS
=1MΩ)V
DGR
650 V
Gate-Source (GND) Voltage V
GS
±30 V
Drain Current Pulsed
(2)
I
DM
21 A
DC
Continuous Drain Current (D2-PAK, I2-PAK)
@ Tc = 25°C I
D
5.3 A
DC
@ Tc =100°CI
D
3.4 A
DC
Continuous Drain Current (TO-220)
@ Tc = 25°C I
D
7A
DC
@ Tc =100°CI
D
4.4 A
DC
Supply Voltage V
CC
20 V
Analog Input Voltage Range V
FB
-0.3 to V
CC
V
Total Power Dissipation (D2-PAK,I2-PAK) P
D
83 W
Total Power Dissipation (TO-220) P
D
145 W
Operating Junction Temperature T
J
Internally limited °C
Operating Ambient Temperature T
A
-25 to +85 °C
Storage Temperature Range T
STG
-55 to +150 °C
ESD Capability, HBM Model
(All pins except Vfb)
-
2.0
(GND-Vfb = 1.5kV)
(Vcc-Vfb = 1.0kV)
kV
ESD Capability, Machine Model
(All pins except Vfb)
-
300
(GND-Vfb = 250V)
(Vcc-Vfb = 100V)
V
Parameter Symbol Value Unit
Junction-to-Ambient Thermal
θ
JA
(1)
- °C/W
Junction-to-Case Thermal (D2-PAK, I2-PAK)
θ
JC
(2)
1.5 °C/W
Junction-to-Case Thermal (TO-220)
θ
JC
(2)
0.9 °C/W
