IXYS reserves the right to change limits, test conditions, and dimensions.
IXGA9289
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
I
C
= 60 A V
CE
= 10 V 60 85 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
ies
5600 pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 160 pF
C
res
38 pF
Q
g
134 nC
Q
ge
I
C
= 60 A, V
GE
= 15 V, V
CE
= 0.5 V
CES
34 nC
Q
gc
29 nC
t
d(on)
33 ns
t
ri
43 ns
t
d(off)
73 ns
t
fi
24 ns
t
d(on)
32 ns
t
ri
72 ns
t
d(off)
84 ns
t
fi
40 ns
R
thJC
0.5 K/W
R
thCK
0.25 K/W
Resistive load, T
J
= 25
°°
°°
°C
I
C
= 60 A, V
GE
= 15 V
V
CE
= 150 V, R
G
= R
off
= 5 Ω
Resistive load, T
J
= 125
°°
°°
°C
I
C
= 60 A, V
GE
= 15 V
V
CE
= 150 V, R
G
= R
off
= 5 Ω
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
TO-263 AA Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
