MOC216VM Datasheet MOC216R2VM, MOC216VM, MOC215R2M | P1-P3

4/10/03

Page 1 of 9

SMALL OUTLINE SURFACE MOUNT

PHOTOTRANSISTOR OPTOCOUPLERS

MOC215-M MOC216-M MOC217-M

DESCRIPTION

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a

monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic

package. They are ideally suited for high density applications, and eliminate the need for

through–the–board mounting.

FEATURES

• UL Recognized (File #E90700, Volume 2)

• VDE Recognized (File #13616) (add option “V” for VDE approval, i.e., MOC215V-M)

• Convenient Plastic SOIC–8 Surface Mountable Package Style

•Low LED Input Current Required, for Easier Logic Interfacing

• Standard SOIC–8 Footprint, with 0.050” Lead Spacing

• Compatible with Dual Wave, Vapor Phase and IR Reﬂow Soldering

• High Input–Output Isolation of 2500 Vac (rms) Guaranteed

APPLICATIONS

•Low power Logic Circuits

• Interfacing and coupling systems of different potentials and impedances

•Telecommunications equipment

•Portable electronics

Marking Information:

• MOC215-M = 215

• MOC216-M = 216

• MOC217-M = 217

BASE

N/C

ANODE

CATHODE

1

2

3

4 5

6

7

8

EMITTER

COLLECTOR

N/C

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SMALL OUTLINE SURFACE MOUNT

PHOTOTRANSISTOR OPTOCOUPLERS

MOC215-M MOC216-M MOC217-M

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C Unless otherwise speciﬁed)

Rating Symbol Value Unit

EMITTER

Forward Current - Continuous

I

F

60 mA

Forward Current - Peak (PW = 100 µs, 120 pps)

I

F

(pk)

1.0 A

Reverse Voltage

V

R

6.0 V

LED Power Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

90

0.8

mW

mW/°C

DETECTOR

Collector-Emitter Voltage

V

CEO

30 V

Collector-Base Voltage

V

CBO

70 V

Emitter-Collector Voltage

V

ECO

7.0 V

Collector Current-Continuous

I

C

150 mA

Detector Power Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

150

1.76

mW

mW/°C

TOTAL DEVICE

Input-Output Isolation Voltage

(1,2)

(60 Hz, 1 minute duration)

V

ISO

2500 Vac(rms)

Total Device Power Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

250

2.94

mW

mW/°C

Ambient Operating Temperature Range

T

A

-40 to +100 °C

Storage Temperature Range

T

stg

-40 to +125 °C

4/10/03

Page 3 of 9

SMALL OUTLINE SURFACE MOUNT

PHOTOTRANSISTOR OPTOCOUPLERS

MOC215-M MOC216-M MOC217-M

** Typical values at T

A

= 25°C unless otherwise noted.

1. Input-Output Isolation Surge Voltage, V

ISO

, is an internal device dielectric breakdown rating.

2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.

3. V

ISO

rating of 2,500 V

AC(RMS)

for t = 1 minute is equivalent to a rating of 3,000 V

AC(RMS)

for t = 1 second.

4. Current Transfer Ratio (CTR) = I

C

/I

F

x 100%.

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C Unless otherwise speciﬁed)

Characteristic Symbol Min Typ** Max Unit

EMITTER

Forward Voltage

(I

F

= 1.0 mA) V

F

— 1.07 1.3 V

Reverse Leakage Current

(V

R

= 6.0 V) I

R

— 0.001 100 µA

Capacitance

C

—18— pF

DETECTOR

Collector-Emitter Dark Current

(V

CE

= 5.0 V, T

A

= 25°C)

I

CEO

— 1.0 50 nA

(V

CE

= 5.0 V, T

A

= 100°C)

— 1.0 — µA

Collector-Emitter Breakdown Voltage

(I

C

= 100 µA) BV

CEO

30 100 — V

Emitter-Collector Breakdown Voltage

(I

E

= 100 µA) BV

ECO

7.0 10 — V

Collector-Emitter Capacitance

(f = 1.0 MHz, V

CE

= 0) C

CE

— 7.0 — pF

COUPLED

Output Collector Current

(4)

MOC215-M

MOC216-M

MOC217-M

(I

F

= 1.0 mA, V

CE

= 5.0 V)

CTR

20

50

100

—

%

Collector-Emitter Saturation Voltage

(I

C

= 100µA, I

F

= 1.0mA) V

CE(sat)

——0.4 V

Tu r n-On Time

(I

C

= 2.0 mA, V

CC

= 10 V,

R

L

= 100

Ω

, ﬁg. 10)

t

on

— 4.0 — µs

Tu r n-Off Time

(I

C

= 2.0 mA, V

CC

= 10 V,

R

L

= 100

Ω

, ﬁg. 10)

t

off

— 4.0 — µs

Rise Time

(I

C

= 2.0 mA, V

CC

= 10 V,

R

L

= 100

Ω

, ﬁg. 10)

t

r

— 3.0 — µs

Fall Time

(I

C

= 2.0 mA, V

CC

= 10 V,

R

L

= 100

Ω

, ﬁg. 10)

t

f

— 3.0 — µs

Input-Output Isolation Voltage

(1,2,3)

(f = 60 Hz, t = 1.0 min.)

V

ISO

2500 — — Vac(rms)

Isolation Resistance

(2)

(V

I-O

= 500 V) R

ISO

10

11

——

Ω

Isolation Capacitance

(2)

(V

I-O

= 0, f = 1.0 MHz) C

ISO

— 0.2 — pF

MOC216VM

MOC216VM

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