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SIR788DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
Vishay Siliconix
SiR788DP
New Product
Document Number: 63659
S12-0808-Rev. A, 16-Apr-12
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical support, please contact: pmostechsupport@vishay.com
N-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
• SkyFET
®
Monolithic TrenchFET
®
Gen III
Power MOSFET and Schottky Diode
•100 % R
g
Tested
• 100 % Avalanche Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Synchronous Buck Converter
• DC/DC
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() Max.
I
D
(A)
a
Q
g
(Typ.)
30
0.0034 at V
GS
= 10 V
60
24 nC
0.0043 at V
GS
= 4.5 V
60
Ordering Information:
SiR788DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK
®
SO-8
Bottom View
N-Channel MOSFET
G
S
D
Schottky
Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
60
a
A
T
C
= 70 °C
60
a
T
A
= 25 °C
28.6
b, c
T
A
= 70 °C
22.8
b, c
Pulsed Drain Current (t = 300 µs)
I
DM
100
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
60
a
T
A
= 25 °C
5.6
b, c
Single Pulse Avalanche Current
L =0.1 mH
I
AS
25
Single Pulse Avalanche Energy
E
AS
31
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
48
W
T
C
= 70 °C 31
T
A
= 25 °C
5.0
b, c
T
A
= 70 °C
3.2
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t 10 s
R
thJA
20 25
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
2.1 2.6
Vishay Siliconix
SiR788DP
www.vishay.com
2
Document Number: 63659
S12-0808-Rev. A, 16-Apr-12
New Product
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0, I
D
= 250 µA
30
V
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
12.5
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
0.03 0.20
mA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
220
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
30 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
0.0027 0.0034
V
GS
= 4.5 V, I
D
= 10 A
0.0033 0.0043
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
85 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
2873
pFOutput Capacitance
C
oss
555
Reverse Transfer Capacitance
C
rss
246
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
50 75
nC
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
24 36
Gate-Source Charge
Q
gs
6.8
Gate-Drain Charge
Q
gd
7.8
Gate Resistance
R
g
f = 1 MHz 0.3 0.9 1.8
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
21 40
ns
Rise Time
t
r
15 30
Turn-Off Delay Time
t
d(off)
28 55
Fall Time
t
f
10 20
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
918
Rise Time
t
r
11 22
Turn-Off Delay Time
t
d(off)
29 55
Fall Time
t
f
918
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
60
A
Pulse Diode Forward Current
a
I
SM
100
Body Diode Voltage
V
SD
I
S
= 3 A
0.47 0.60 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
23 45 ns
Body Diode Reverse Recovery Charge
Q
rr
10.5 21 nC
Reverse Recovery Fall Time
t
a
9
ns
Reverse Recovery Rise Time
t
b
14
Document Number: 63659
S12-0808-Rev. A, 16-Apr-12
www.vishay.com
3
Vishay Siliconix
SiR788DP
New Product
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
20
40
60
80
100
0.0 0.5 1.0 1.5 2.0 2.5
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 3 V
V
GS
= 10 V thru 4 V
V
GS
= 2 V
0.0020
0.0024
0.0028
0.0032
0.0036
0.0040
0 20 40 60 80 100
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 11 22 33 44 55
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 15 V
V
DS
= 20 V
V
DS
= 10 V
I
D
= 10 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
740
1480
2220
2960
3700
0 5 10 15 20 25 30
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 20 A
V
GS
= 10 V
V
GS
= 4.5 V
P1-P3P4-P6P7-P9P10-P12P13-P13

SIR788DP-T1-GE3

Mfr. #:
Buy SIR788DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
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