I
NTEGRATED
C
IRCUITS
D
IVISION
www.ixysic.com
2
R05
LDA212
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Absolute Maximum Ratings @ 25ºC
Parameter Ratings Units
Breakdown Voltage 30 V
P
Input Control Current 100 mA
Peak (10ms) 1 A
Power Dissipation
Input Power Dissipation
1
150 mW
Phototransistor
2
150 mW
Isolation Voltage, Input to Output 3750 V
rms
Operational Temperature -40 to +85 °C
Storage Temperature -40 to +125 °C
1
Derate linearly 1.33mW / ºC
2
Derate linearly 2mW / ºC
Electrical Characteristics @ 25ºC
Parameter Conditions Symbol Min Typ Max Units
Output Characteristics
Phototransistor Breakdown Voltage I
C
= 100µA BV
CEO
30 50 - V
Phototransistor Dark Current V
CEO
= 5V, I
F
= 0mA I
CEO
- 50 500 nA
Saturation Voltage I
C
= 3mA, I
F
= 1mA V
CE(sat)
--1V
Current Transfer Ratio I
F
= 1mA, V
CE
= 2V CTR 300 8500 30000 %
Output Capacitance 50V, f =1MHz C
OUT
-3-pF
Input Characteristics
Input Control Current I
C
= 3mA, V
CE
= 2V I
F
- 0.07 1 mA
Input Voltage Drop I
F
= 5mA V
F
0.9 1.2 1.4 V
Common Characteristics
Capacitance, Input to Output - C
I/O
-3-pF
Switching Time Test Circuit
V
CC
V
CE
R
L
I
F
Pulse Width=5ms
Duty Cycle=1%
I
F
10%
90%
t
on
t
off
V
CE
Characteristic Symbol Test Condition Typ Units
Turn-On Time t
on
V
CC
=5V, I
F
=1mA, R
L
=500
8
s
Turn-Off Time t
off
345
Switching Characteristics @ 25ºC
