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UB16DCT-E3/8W

P1-P3P4-P5
New Product
U(B)16BCT thru U(B)16DCT
Vishay General Semiconductor
Document Number: 89022
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Ultrafast Plastic Rectifier
FEATURES
• Oxide planar chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection specifically
for DCM application.
MECHANICAL DATA
Case: TO-220AB and TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
8 A x 2
V
RRM
100 V, 150 V, 200 V
I
FSM
80 A
t
rr
35 ns
V
F
at I
F
= 8 A 0.87 V
T
J
max. 150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
U16xCT
UB16xCT
K
PIN 1
PIN 2 HEATSINK
1
2
3
1
2
K
TO-263AB
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL U(B)16BCT U(B)16CCT U(B)16DCT UNIT
Maximum repetitive peak reverse voltage V
RRM
100 150 200 V
Max. average forward rectified current (Fig. 1)
total device
per diode
I
F(AV)
16
8
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I
FSM
80 A
Electrostatic discharge capacitor voltage,
human body model: C = 150 pF, R = 1.5 kΩ (contact mode)
V
C
8kV
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
New Product
U(B)16BCT thru U(B)16DCT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89022
Revision: 13-May-08
2
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
(1)
I
F
= 4 A
I
F
= 8 A
T
J
= 25 °C
V
F
0.90
0.99
-
1.10
V
I
F
= 4 A
I
F
= 8 A
T
J
= 125 °C
0.77
0.87
-
0.95
Reverse current per diode
(2)
rated V
R
T
J
= 25 °C
T
J
= 125 °C
I
R
0.5
155
10
600
µA
Reverse recovery time per diode I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
28 35 ns
Reverse recovery time per diode
I
F
= 8 A, dI/dt = 20 A/µs,
V
R
= 200 V, I
rr
= 0.1 I
RM
t
rr
67 80 ns
Stored charge per diode Q
rr
33 - nC
Forward recovery time per diode
I
F
= 8 A, dI/dt = 64 A/µs,
V
F
= 1.1 x V
F
max.
t
fr
160 - ns
Peak forward voltage per diode V
FP
3.3 - V
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL U16xCT UB16xCT UNIT
Typical thermal resistance per diode R
θJC
3.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB U16DCT-E3/4W 1.87 4W 50/tube Tube
TO-263AB UB16DCT-E3/4W 1.31 4W 50/tube Tube
TO-263AB UB16DCT-E3/8W 1.31 8W 800/reel Tape and reel
Figure 1. Maximum Forward Current Derating Curve
20
24
16
12
8
4
0
0 25 50 75 100 125 150 175
Average Forward Rectified Current (A)
Case Temperature (°C)
Resistive or Inductive Load
Figure 2. Forward Power Loss Characteristics Per Diode
10
8
9
5
3
2
0
1
4
7
6
02468 10
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = 0.2
D = t
p
/T t
p
T
New Product
U(B)16BCT thru U(B)16DCT
Vishay General Semiconductor
Document Number: 89022
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
100
10
1
0.1
0.01
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 100 °C
T
J
= 125 °C
T
J
= 50 °C
T
J
= 75 °C
1000
100
10
10 20 30 40 50 60 70 80 90 100
1
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Junction Capacitance Per Diode
100
10
0.1 1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
10
1
0.1
0.001 10.10.01
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

UB16DCT-E3/8W

Mfr. #:
Buy UB16DCT-E3/8W
Manufacturer:
Vishay
Description:
Rectifiers 200 Volt 16 Amp 35ns Dual Common Cathode
Lifecycle:
New from this manufacturer.
Delivery:
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