PM100CSD120 Datasheet PM100CSD120 | P1-P3

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100CSD120

FLAT-BASE TYPE

INSULATED PACKAGE

Jul. 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100CSD120

FLAT-BASE TYPE

INSULATED PACKAGE

PM100CSD120

FEATURE

a) Adopting new 4th generation planar IGBT chip, which per-

formance is improved by 1µm fine rule process.

b) Using new Diode which is designed to get soft reverse

recovery characteristics.

c) Keeping the package compatibility.

The layout/position of both terminal pin and mounting hole

is same as S-series 3rd generation IPM .

•3φ 100A, 1200V Current-sense IGBT for 15kHz switching

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for over-

current, short-circuit, over-temperature & under-voltage

(P-Fo available from upper leg devices)

• Acoustic noise-less 18.5/22kW class inverter application

• UL Recognized Yellow Card No.E80276(N)

File No.E80271

APPLICATION

General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

16.5

135

24.1

5

10.6

11.6

MOUNTING

HOLES

40.68

3.22 10

3-2

3.22

3-2

3-2 3-2 6-2

10

66.44

10

11

202039.5

±1

1234 5678

9

10

11

12

13

14

15

16

17

18

19

95.5

±0.5

110

±1

120.5

LABEL

4- φ5.5

φ2.54

Screwing depth

Min9.0

2-φ2.54

±0.5

0.5

51.5

A

26

10.5

13

23.1

7.7

4

26

21.3

33.7

34.7

4-R6

6-M5 NUTS

±0.3

24.1

–0.5

+1.0

U

P N B PPS

VW

1. V

UPC

2. U

FO

3. U

P

4. V

UP1

5. V

VPC

6. V

FO

7. V

P

8. V

VP1

9. V

WPC

10. W

FO

11. W

P

12. V

WP1

13. V

NC

14. V

N1

15. NC

16. U

N

17. V

N

18. W

N

19. F

O

Terminal code

A : DETAIL

19- 0.5

0.5

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100CSD120

FLAT-BASE TYPE

INSULATED PACKAGE

Jul. 2005

INTERNAL FUNCTIONS BLOCK DIAGRAM

Rfo=1.5kΩ

W

P

V

WP1

V

WPC

U

N

NC Fo

NC N W V PU

V

P

V

VP1

V

VPC

U

P

V

UP1

V

UPC

W

N

V

N1

V

NC

V

N

U

FO

W

FO

V

FO

RfoRfo Rfo

Rfo

Th

Gnd In Fo Vcc

Gnd

Si Out

Gnd In Fo

TEMP

Vcc

Gnd

Si Out

Gnd In Fo Vcc

Gnd

Si Out

Gnd In Fo Vcc

Gnd

Si Out

Gnd In Fo Vcc

Gnd

Si Out

Gnd In Fo Vcc

Gnd

Si Out

VCES

±IC

±ICP

PC

Tj

Collector-Emitter Voltage

Collector Current

Collector Current (Peak)

Collector Dissipation

Junction Temperature

V

D = 15V, VCIN = 15V

T

C = 25°C

T

C = 25°C

T

C = 25°C

V

A

W

°C

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

INVERTER PART

Symbol Parameter Condition Ratings Unit

1200

100

200

595

–20 ~ +150

V

FO

IFO

CONTROL PART

V

mA

20

Supply Voltage

Input Voltage

Fault Output Supply Voltage

Fault Output Current

Symbol

Parameter Condition Ratings Unit

Applied between : V

UP1-VUPC

VVP1-VVPC, VWP1-VWPC, VN1-VNC

Applied between : UP-VUPC, VP-VVPC

WP-VWPC, UN • VN • WN-VNC

Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC

FO-VNC

Sink current at UFO, VFO, WFO, FO terminals

20

VD

VCIN

V

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100CSD120

FLAT-BASE TYPE

INSULATED PACKAGE

Jul. 2005

Parameter

Symbol

Supply Voltage Protected by

OC & SC

Supply Voltage (Surge)

Module Case Operating

Temperature

Storage Temperature

Isolation Voltage

Condition

V

CC(surge)

TC

Tstg

Viso

Ratings

V

CC(PROT)

800

1000

–20 ~ +100

–40 ~ +125

2500

Unit

V

°C

V

rms

V

D = 13.5 ~ 16.5V, Inverter Part,

T

j = 125°C Start

Applied between : P-N, Surge value or without switching

(Note-1)

60Hz, Sinusoidal, Charged part to Base, AC 1 min.

(Note-1) TC measurement point is as shown below. (Base plate depth 3mm)

TOTAL SYSTEM

Tc

63mm

U

PNB

VW

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)

INVERTER PART

3.2

2.8

3.5

2.5

0.3

1.0

3.5

1.2

1

10

Min. Typ. Max.

Collector-Emitter

Saturation Voltage

Collector-Emitter

Cutoff Current

–I

C = 100A, VD = 15V, VCIN = 15V (Fig. 2)

T

j = 25°C

T

j = 125°C

ParameterSymbol

Test Condition

V

CE(sat)

ICES

VEC

ton

trr

tc(on)

toff

tc(off)

Limits

—

0.5

—

2.4

2.1

2.5

1.0

0.15

0.4

2.5

0.7

—

T

j = 25°C

T

j = 125°C

FWDi Forward Voltage

Switching Time

V

D = 15V, VCIN = 15V↔0V

V

CC = 600V, IC = 100A

T

j = 125°C

Inductive Load (upper and lower arm) (Fig. 3)

V

CE

= V

CES

, V

CIN

= 15V

(Fig. 4)

V

D = 15V, IC = 100A

V

CIN = 0V, Pulsed (Fig. 1)

V

mA

V

µs

Unit

0.21

0.35

0.13

0.21

0.018

°C/W

Rth(j-c)Q

Rth(j-c)F

Rth(j-c’)Q

Rth(j-c’)F

Rth(c-f)

Inverter IGBT part (per 1 element), (Note-1)

Inverter FWDi part (per 1 element), (Note-1)

Inverter IGBT part (per 1 element), (Note-2)

Inverter FWDi part (per 1 element), (Note-2)

Case to fin, Thermal grease applied (per 1 module)

Symbol Parameter

Test Condition

Unit

Limits

Min. Typ. Max.

—

Junction to case Thermal

Resistances

THERMAL RESISTANCES

Contact Thermal Resistance

(Note-2) T

C measurement point is just under the chips.

If you use this value, R

th(f-a) should be measured just under the chips.

PM100CSD120

PM100CSD120

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