74HC_HCT1G125_5 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 23 December 2005 9 of 16
Philips Semiconductors
74HC1G125; 74HCT1G125
Bus buffer/line driver; 3-state
[1] All typical values are measured at T
amb
= 25 °C.
[2] C
PD
is used to determine the dynamic power dissipation (P
D
in µW).
P
D
=C
PD
× V
CC
2
× f
i
× N+Σ(C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
Σ(C
L
× V
CC
2
× f
o
) = sum of the outputs.
Table 11: Dynamic characteristics 74HCT1G125
Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test
circuit see
Figure 8
Symbol Parameter Conditions Min Typ Max Unit
T
amb
= −40 °C to +85 °C
[1]
t
PHL
,
t
PLH
propagation delay A to Y see Figure 6
V
CC
= 4.5 V - 11 30 ns
V
CC
=5V; C
L
=15pF - 10 - ns
t
PZH
,
t
PZL
3-state output enable time
OE to Y
V
CC
= 4.5 V; see Figure 7 -1035ns
t
PHZ
,
t
PLZ
3-state output disable time
OE to Y
V
CC
= 4.5 V; see Figure 7 -1131ns
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
− 1.5 V
[2]
-27-pF
T
amb
= −40 °C to +125 °C
t
PHL
,
t
PLH
propagation delay A to Y V
CC
= 4.5 V; see Figure 6 - - 36 ns
t
PZH
,
t
PZL
3-state output enable time
OE to Y
V
CC
= 4.5 V; see Figure 7 - - 42 ns
t
PHZ
,
t
PLZ
3-state output disable time
OE to Y
V
CC
= 4.5 V; see Figure 7 - - 38 ns
