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BAT85,113

P1-P3P4-P6P7-P9
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
BAT85
Schottky barrier single diode
24 July 2012 Product data sheet
Scan or click this QR code to view the latest information for this product
1. Product profile
1.1 General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode
is suitable for mounting on a 2 E (5.08 mm) pitch.
1.2 Features and benefits
•
Low forward voltage
•
Guard ring protected
•
Hermetically-sealed leaded glass package
1.3 Applications
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Blocking diodes
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
F(AV)
average forward
current
δ ≤ 0.5 ; f = 20 kHz; PCB mounting,
lead length = 4 mm; half sine wave
- - 200 mA
V
R
reverse voltage - - 30 V
V
F
forward voltage I
F
= 10 mA; T
amb
= 25 °C - - 400 mV
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
ak
DO-34 (SOD68)
aaa-003679
K A
NXP Semiconductors
BAT85
Schottky barrier single diode
BAT85 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 24 July 2012 2 / 8
3. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BAT85 DO-34 hermetically sealed glass package; axial leaded; 2 leads SOD68
4. Marking
Table 4. Marking codes
Type number Marking code
BAT85 marking band
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 30 V
I
F
forward current - 200 mA
I
F(AV)
average forward current δ ≤ 0.5 ; f = 20 kHz; PCB mounting,
lead length = 4 mm; half sine wave
- 200 mA
I
FRM
repetitive peak forward current t
p
≤ 1 s; δ ≤ 0.5 - 300 mA
I
FSM
non-repetitive peak forward
current
t
p
≤ 10 ms; T
j(init)
= 25 °C - 5 A
T
j
junction temperature - 125 °C
T
amb
ambient temperature -65 125 °C
T
stg
storage temperature -65 150 °C
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 320 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
P1-P3P4-P6P7-P9

BAT85,113

Mfr. #:
Buy BAT85,113
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers SCHOTTKY 30V 200MA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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