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TN1515-600B-TR

P1-P3P4-P6P7-P8
This is information on a product in full production.
September 2015 DocID12231 Rev 3 1/8
TN1515-600B
Standard 15 A SCRs
Datasheet - production data
Features
• On-state RMS current, I
T(RMS)
: 15 A
• Repetitive peak off-state voltage,
V
DRM
/V
RRM
:600 V
• Triggering gate current, I
GT
: 15 mA
• DPAK surface mount package
Application
• Universal motor DC phase control
• Power supply crowbar circuit
• Power Supply inrush limiter
• Motor soft start controller
• AC-DC voltage regulator
Benefits
• High AC surge current density
• Compact DPAK foot print
Description
The TN1515-600B is a 15 A thyristor SCR housed
in DPAK package. It fits any high voltage
application that requires a high power density and
compact housing design.
$
$
*
.
$
.
*
'3$.
Table 1. Device summary
Symbol Value Unit
I
T(RMS)
15 A
V
DRM
/V
RRM
600 V
I
GT (Q
1
)
15 mA
www.st.com
Characteristics TN1515-600B
2/8 DocID12231 Rev 3
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
On-state RMS current (180° conduction angle) T
c
= 109 °C 15 A
I
T(AV)
Average on-state current (180° conduction angle) T
c
= 109 °C 9.5 A
I
TSM
Non repetitive surge peak
on-state current
t
p
= 8.3 ms
T
j
= 25 °C
165
A
t
p
= 10 ms 150
I
2
tI
2
t value for fusing t
p
= 10 ms T
j
= 25 °C 113 A
2
S
dI/dt
Critical rate of rise of on-state
current I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz T
j
= 125 °C 50 A/µs
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 4 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reverse gate voltage 5 V
Table 3. Standard electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions Values Unit
I
GT
V
out
= 12 V, R
L
= 33 Ω T
j
= 25 °C
MIN. 2
mA
MAX. 15
V
GT
V
out
= 12 V, R
L
= 33 Ω
MAX. 1.3 V
V
GD
V
D
= V
DRM,
R
L
= 3.3 kΩ T
j
= 125 °C MIN. 0.2 V
I
H
I
T
= 500 mA MAX. 40 mA
I
L
I
G
= 1.2 I
GT
MAX. 60 mA
dV/dt V
D
= 67% V
DRM,
gate open T
j
=125 °C MIN. 200 V/µs
V
TM
I
TM
= 30 A t
p
= 380 µs T
j
= 25 °C MAX. 1.6 V
V
TO
Threshold voltage T
j
= 125 °C MAX. 0.85 V
R
D
Dynamic resistance T
j
= 125 °C MAX. 25 mΩ
I
DRM
I
RRM
V
D
/V
R =
V
DRM
= V
RRM
T
j
= 25 °C
MAX.
5µA
T
j
= 125 °C 2 mA
DocID12231 Rev 3 3/8
TN1515-600B Characteristics
8
Table 4. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (DC) 1.2 °C/W
R
th(j-a)
Junction to ambient S
(1)
= 0.5 cm
2
70 °C/W
1. S = Copper surface under tab
Figure 1. Maximum average power dissipation
versus average on-state current
Figure 2. Average and DC on-state current
versus case temperature
0
2
4
6
8
10
12
14
012345678910
P
(
W
)
α=180°
360°
I (A)
T(AV)
0
2
4
6
8
10
12
14
16
0 25 50 75 100 125
α=180°
D.C.
T
C
(°C)
I (A)
T(AV)
Figure 3. Average and DC on-state current
versus ambient temperature, PCB FR4, copper
thickness 35 µm
Figure 4. Thermal impedance junction to
ambient versus pulse duration, PCB FR4,
copper thickness 35 µm
0.0
0.5
1.0
1.5
2.0
2.5
0 25 50 75 100 125
α=180°
D.C.
S
CU
=0.5cm²
T
amb
(°C)
I(A)
T(AV)
1
10
100
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
(
°C/W
)
S
CU
= 0.5 cm²
t
P
(s)
P1-P3P4-P6P7-P8

TN1515-600B-TR

Mfr. #:
Buy TN1515-600B-TR
Manufacturer:
STMicroelectronics
Description:
SCRs 15 A SCR
Lifecycle:
New from this manufacturer.
Delivery:
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