TFF1018HN
All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 7 December 2011 4 of 12
NXP Semiconductors
TFF1018HN
Integrated mixer oscillator PLL for satellite LNB
[1] The distance between the outer edges of pin 2 and pin 3 is 740 m. This gives an optimum transition from a 1.1 mm wide, Z
0
= 50 line
on RO4223 Printed-Circuit Board (PCB) material of 0.5 mm height to the TFF1018HN/N1.
9. Limiting values
10. Recommended operating conditions
[1] For a 10.75 GHz LO frequency, select high band and use a crystal with frequency 10.75 GHz / 424 = 25.353774 MHz.
GND1 6 Ground. Connect this pin to the exposed die pad landing and the RF input CPW line.
n.c. 7 not connected. Use this pin to route the ground layer on top of the PCB to the exposed die pad.
LF 8 Loop filter PLL. Connect loop filter between this pin and VREG (pin 9).
VREG 9 Regulated output voltage for VCO loop filter. Connect loop filter to this pin. Decouple against die pad via
pin 7.
HB 10 High band / low band selection. Connect this pin to the tone detector or to a logic signal.
XO2 11 Crystal connection 2. Connect crystal between this pin and XO1 (pin 12).
XO1 12 Crystal connection 1. Connect crystal between this pin and XO2 (pin 11).
GND2 13 Ground. Connect this pin to the exposed die pad landing.
IF 14 IF output
IF_GND 15 IF output ground. Connect this pin to the exposed die pad landing and the output transmission line ground.
V
CC
16 Supply voltage
Table 3. Pin description
…continued
Symbol Pin Description
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +6 V
V
I(HB)
input voltage on pin HB 0.5 +6 V
T
stg
storage temperature 40 +125 C
Table 5. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 4.5 5 5.5 V
V
I(HB)
input voltage on pin HB 0 - 5.5 V
T
amb
ambient temperature 40 +25 +85 C
Z
0
characteristic impedance - 50 -
f
i(RF)
RF input frequency low band 10.7 - 11.7 GHz
high band 11.7 - 12.75 GHz
f
LO
LO frequency low band - 9.75 - GHz
high band
[1]
-10.6- GHz
f
o(IF)
IF output frequency low band 0.95 - 1.95 GHz
high band 1.1 - 2.15 GHz
C
L(xtal)
crystal load capacitance - 10 - pF
ESR equivalent series resistance - - 40
f
xtal
crystal frequency - 25 - MHz
