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MC74HC1G14DFT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 12
1 Publication Order Number:
MC74HC1G14/D
MC74HC1G14
Single Inverter with
Schmitt-Trigger Input
The MC74HC1G14 is a high speed CMOS inverter with
Schmitt−Trigger input fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The MC74HC1G14 output drive current is 1/2 compared to
MC74HC series.
• High Speed: t
PD
= 7.0 ns (Typ) at V
CC
= 5.0 V
• Low Power Dissipation: I
CC
= 1.0 mA (Max) at T
A
= 25_C
• High Noise Immunity
• Balanced Propagation Delays (t
PLH
= t
PHL
)
• Symmetrical Output Impedance (I
OH
= I
OL
= 2.0 mA)
• Chip Complexity: FET = 101
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Figure 1. Pinout (Top View)
V
CC
NC
IN A
OUT YGND
Figure 2. Logic Symbol
IN A
OUT Y
1
1
2
3
4
5
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
PIN ASSIGNMENT
1
2
3 GND
NC
IN A
4
5V
CC
OUT Y
L
H
FUNCTION TABLE
Inputs Outputs
H
L
http://onsemi.com
MARKING
DIAGRAMS
HA = Device Code
M = Date Code*
G = Pb−Free Package
SC−88A / SOT−353 / SC−70
DF SUFFIX
CASE 419A
TSOP−5 / SOT−23 / SC−59
DT SUFFIX
CASE 483
HA M G
G
1
5
HA M G
G
M
1
5
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
MC74HC1G14
http://onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage *0.5 to )7.0 V
V
IN
DC Input Voltage *0.5 to V
CC
)0.5 V
V
OUT
DC Output Voltage *0.5 to V
CC
)0.5 V
I
IK
DC Input Diode Current $20 mA
I
OK
DC Output Diode Current $20 mA
I
OUT
DC Output Sink Current $12.5 mA
I
CC
DC Supply Current per Supply Pin $25 mA
T
STG
Storage Temperature Range *65 to )150
_C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260
_C
T
J
Junction Temperature Under Bias )150
_C
q
JA
Thermal Resistance SC70−5/SC−88A/SOT−353 (Note 1)
SOT23−5/TSOP−5/SC59−5
350
230
_C/W
P
D
Power Dissipation in Still Air at 85_CSC70−5/SC−88A/SOT−353
SOT23−5/TSOP−5/SC59−5
150
200
mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
u2000
u200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125_C (Note 5)
$500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage 2.0 6.0 V
V
IN
DC Input Voltage 0.0 V
CC
V
V
OUT
DC Output Voltage 0.0 V
CC
V
T
A
Operating Temperature Range *55 )125
_C
t
r
, t
f
Input Rise and Fall Time V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
−
−
No Limit
No Limit
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
NORMALIZED FAILURE RATE
TIME, YEARS
T
J
= 130_C
T
J
= 120_C
T
J
= 110_C
T
J
= 100_C
T
J
= 90_C
T
J
= 80_C
MC74HC1G14
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
V
CC
T
A
= 25_C T
A
v 85_C *55_C v T
A
v 125_C
Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
V
T+
Positive Threshold
Voltage
3.0
4.5
5.5
1.85
2.86
3.50
2.0
3.0
3.6
2.20
3.15
3.85
2.20
3.15
3.85
2.20
3.15
3.85
V
V
T−
Negative Threshold
Voltage
3.0
4.5
5.5
0.9
1.35
1.65
1.5
2.3
2.9
1.65
2.46
3.05
0.9
1.35
1.65
0.9
1.35
1.65
V
V
H
Hysteresis Voltage 3.0
4.5
5.5
0.30
0.40
0.50
0.57
0.67
0.74
1.20
1.40
1.60
0.30
0.40
0.50
1.20
1.40
1.60
0.30
0.40
0.50
1.20
1.40
1.60
V
V
OH
Minimum High−Level
Output Voltage
V
IN
= V
IH
or V
IL
I
OH
= −20 mA
2.0
3.0
4.5
6.0
1.9
2.9
4.4
5.9
2.0
3.0
4.5
6.0
1.9
2.9
4.4
5.9
1.9
2.9
4.4
5.9
V
V
IN
v V
T
*Min
I
OH
= *2 mA
I
OH
= *2.6 mA
4.5
6.0
4.18
5.68
4.31
5.80
4.13
5.63
4.08
5.58
V
OL
Maximum Low−Level
Output Voltage
V
IN
≥ V
T
)Max
I
OL
= 20 mA
2.0
3.0
4.5
6.0
0.0
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 2 mA
I
OL
= 2.6 mA
4.5
6.0
0.17
0.18
0.26
0.26
0.33
0.33
0.40
0.40
I
IN
Maximum Input
Leakage Current
V
IN
= 6.0 V or GND 6.0 $0.1 $1.0 $1.0
mA
I
CC
Maximum Quiescent
Supply Current
V
IN
= V
CC
or GND 6.0 1.0 10 40
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 6.0 ns)
T
A
= 25_C T
A
v 85_C *55_C v T
A
v 125_C
Symbol Parameter Test Conditions Min Typ Max Min Max Min Max Unit
t
PLH
,
t
PHL
Maximum
Propagation Delay,
Input A or B to Y
V
CC
= 5.0 V C
L
= 15 pF 3.5 15 20 25 ns
V
CC
= 2.0 V C
L
= 50 pF
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
19
10.5
7.5
6.5
100
27
20
17
125
35
25
21
155
90
35
26
t
TLH
,
t
THL
Output Transition
Time
V
CC
= 5.0 V C
L
= 15 pF 3 10 15 20 ns
V
CC
= 2.0 V C
L
= 50 pF
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
25
16
11
9
125
35
25
21
155
45
31
26
200
60
38
32
C
IN
Maximum Input
Capacitance
5 10 10 10 pF
Typical @ 25_C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Note 6) 10 pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
P1-P3P4-P6

MC74HC1G14DFT1G

Mfr. #:
Buy MC74HC1G14DFT1G
Manufacturer:
ON Semiconductor
Description:
Inverters 2-6V Single CMOS Schmitt Input
Lifecycle:
New from this manufacturer.
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