NE681M03
NEC's NPN SILICON TRANSISTOR
• NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
f
T = 7 GHz
• LOW NOISE FIGURE:
NF = 1.4 dB
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
PART NUMBER NE681M03
EIAJ
1
REGISTERED NUMBER 2SC5433
PACKAGE OUTLINE M03
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz 4.5 7.0
NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 1.4 2.7
|S21E|
2
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 10 12
hFE
2
Forward Current Gain at VCE = 3 V, IC = 7 mA 80 145
ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 0.8
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.8
CRE
3
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.9
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
California Eastern Laboratories
1
3
2
1.2±0.05
0.8±0.1
+0.1
-0.05
0.15
1.4 ±0.1
(0.9)
0.59±0.05
0.2±0.1
0.45
0.45
0.3±0.1
TE
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
DESCRIPTION
NEC's NE681M03 transistor is ideal for low noise, high gain,
and low cost amplifier applications. NEC's new low profile/
flat lead style "M03" package is ideal for today's portable
wireless applications. The NE681 is also available in chip,
Micro-x, and six different low cost plastic surface mount
package styles.
