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PT334-6B

P1-P3P4-P6P7-P7
Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 2 Page: 1 of 7
Device No：CDPT-033-001 Prepared date：2005/11/17 Prepared by：zhouhong
Technical Data Sheet
5mm Phototransistor T-1
PT334-6B
Features
․Fast response time
․High photo sensitivity
․Pb free
․This product itself will remain within RoHS compliant version.
Descriptions
․PT334-6B is a high speed and high sensitive NPN silicon
NPN epitaxial planar phototransistor molded in a standard 5 mm package.
Due to is black epoxy the device is sensitive to visible and near
Infrared radiation.
Applications
․Infrared applied system
․Camera
․Cockroach catcher
Device Selection Guide
Chip
LED Part No.
Material
Lens Color
PT334-6B Silicon Black
Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 2 Page: 2 of 7
Device No：CDPT-033-001 Prepared date：2005/11/17 Prepared by：zhouhong
PT334-6B
Package Dimensions
Notes: 1.All dimensions are in millimeters
2.Tolerances unless dimensions ±0.25mm
Absolute Maximum Ratings (Ta=25℃)
Parameter Symbol Rating Units
Collector-Emitter Voltage V
CEO
30
V
Emitter-Collector-Voltage V
ECO
5
V
Collector Current I
C
20
mA
Operating Temperature Topr
-25 ~ +85℃
℃
Storage Temperature Tstg
-40 ~ +85℃
℃
Lead Soldering Temperature Tsol 260
℃
Power Dissipation at (or
below)
25℃ Free Air Temperature
Pc 75
mW
Notes: *1:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 2 Page: 3 of 7
Device No：CDPT-033-001 Prepared date：2005/11/17 Prepared by：zhouhong
PT334-6B
Electro-Optical Characteristics (Ta=25℃)
Parameter Symbol Condition Min. Typ. Max. Units
Collector – Emitter
Breakdown Voltage
BV
CEO
I
C
=100μA
Ee=0mW/cm
2
30
--- --- V
Emitter-Collector
Breakdown Voltage
BV
ECO
I
E
=100μA
Ee=0mW/cm
2
5
--- --- V
Collector-Emitter
Saturation Voltage
V
CE)(sat)
I
C
=2mA
Ee=1mW/cm
2
--- ---
0.4
V
Rise Time t
r
--- 15 ---
Fall Time t
f
V
CE
=5V
I
C
=1mA
RL=1000Ω
--- 15 ---
μS
Collector Dark Current
I
CEO
Ee=0mW/cm
2
V
CE
=20V
--- --- 100 nA
On State Collector Current
I
C(on)
Ee=1mW/cm
2
V
CE
=5V
0.7 2.0 --- mA
Wavelength of
Peak Sensitivity
λp
--- --- 940 --- nm
Rang of Spectral Bandwidth
λ
0.5
--- --- 840-1200 --- nm
Rankings
Parameter Symbol Min Max
Unit Test Condition
G 0.70 1.90
H 1.14 2.60
J 1.77 3.61
K 2.67 5.07
L
Ic(ON)
4.18 7.07
mA
Vc
E=5V
Ee=1mW/cm²
P1-P3P4-P6P7-P7

PT334-6B

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Description:
Optical Sensors Phototransistors IR Phototransisto
Lifecycle:
New from this manufacturer.
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