STW15NB50
STH15NB50FI
N-CHANNEL 500V - 0.33Ω - 14.6A -
T0-247/ISOWATT218 PowerMESH MOSFET
■ TYPICAL R
DS(on)
= 0.33 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
®
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW15NB50 STH15NB50FI
V
DS
Drain-source Voltage (V
GS
= 0) 500 V
V
DGR
Drain- gate Voltage (R
GS
= 20 kΩ)
500 V
V
GS
Gate-source Voltage ± 30 V
I
D
Drain Current (continuous) at T
c
= 25
o
C 14.6 10.5 A
I
D
Drain Current (continuous) at T
c
= 100
o
C 9.2 6.6 A
I
DM
(•) Drain Current (pulsed) 58.4 58.4 A
P
tot
Total Dissipation at T
c
= 25
o
C19080W
Derating Factor 0.64 1.52 W/
o
C
dv/dt(
1) Peak Diode Recovery voltage slope 4 V/ns
V
ISO
Insulation Withstand Voltage (DC) 4000 V
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
TYPE V
DSS
R
DS(on)
I
D
STW15NB50
STH15NB50FI
500 V
500 V
< 0.36 Ω
< 0.36 Ω
14.6 A
10.5 A
June 1998
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TO-247 ISOWATT218
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Obsolete Product(s) - Obsolete Product(s)
