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PZT2907AT3

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 10
1 Publication Order Number:
PZT2907AT1/D
PZT2907A
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications.
Features
• NPN Complement is PZT2222AT1
• The SOT-223 Package can be Soldered Using Wave or Reflow
• SOT-223 Package Ensures Level Mounting, Resulting in Improved
Thermal Conduction, and Allows Visual Inspection of Soldered
Joints. The Formed Leads Absorb Thermal Stress during Soldering
Eliminating the Possibility of Damage to the Die
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−60 Vdc
Collector−Base Voltage V
CBO
−60 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−600 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1)
T
A
= 25°C
P
D
1.5
12
W
mW/°C
Thermal Resistance Junction−to−Ambient
(Note 1)
R
q
JA
83.3 °C/W
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
T
L
260
10
°C
Sec
Operating and Storage Temperature Range T
J
, T
stg
−65 to
+150
°C
1. FR−4 with 1 oz and 713 mm
2
of copper area.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
COLLECTOR
2, 4
1
BASE
3
EMITTER
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device Package Shipping
†
ORDERING INFORMATION
PZT2907AT1G SOT−223
(Pb−Free)
1,000 / Tape & Reel
1
AYW
P2F G
G
P2F = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
http://onsemi.com
(Note: Microdot may be in either location)
PZT2907AT3G SOT−223
(Pb−Free)
4,000 / Tape & Reel
SPZT2907AT1G SOT−223
(Pb−Free)
1,000 / Tape & Reel
1
2
3
4
PZT2907A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(I
C
= −10 mAdc, I
E
= 0)
V
(BR)CBO
−60 − −
Vdc
Collector−Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
−60 − −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −10 mAdc, I
C
= 0)
V
(BR)EBO
−5.0 − −
Vdc
Collector−Base Cutoff Current
(V
CB
= − 50 Vdc, I
E
= 0)
I
CBO
− − −10
nAdc
Collector−Emitter Cutoff Current
(V
CE
= − 30 Vdc, V
BE
= 0.5 Vdc)
I
CEX
− − −50
nAdc
Base−Emitter Cutoff Current
(V
CE
= − 30 Vdc, V
BE
= − 0.5 Vdc)
I
BEX
− − −50
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= − 0.1 mAdc, V
CE
= −10 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc)
(I
C
= −10 mAdc, V
CE
= −10 Vdc)
(I
C
= −150 mAdc, V
CE
= −10 Vdc)
(I
C
= − 500 mAdc, V
CE
= −10 Vdc)
h
FE
75
100
100
100
50
−
−
−
−
−
−
−
−
300
−
−
Collector-Emitter Saturation Voltages
(I
C
= −150 mAdc, I
B
= −15 mAdc)
(I
C
= − 500 mAdc, I
B
= −50 mAdc)
V
CE(sat)
−
−
−
−
−0.4
−1.6
Vdc
Base-Emitter Saturation Voltages
(I
C
= −150 mAdc, I
B
= −15 mAdc)
(I
C
= − 500 mAdc, I
B
= − 50 mAdc)
V
BE(sat)
−
−
−
−
−1.3
−2.6
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain − Bandwidth Product
(I
C
= − 50 mAdc, V
CE
= − 20 Vdc, f = 100 MHz)
f
T
200 − −
MHz
Output Capacitance
(V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz)
C
c
− − 8.0
pF
Input Capacitance
(V
EB
= − 2.0 Vdc, I
C
= 0, f = 1.0 MHz)
C
e
− − 30
pF
SWITCHING TIMES
Turn-On Time
(V
CC
= − 30 Vdc, I
C
= −150 mAdc,
I
B1
= −15 mAdc)
t
on
− − 45
ns
Delay Time t
d
− − 10
Rise Time t
r
− − 40
Turn-Off Time
(V
CC
= − 6.0 Vdc, I
C
= −150 mAdc,
I
B1
= I
B2
= −15 mAdc)
t
off
− − 100
ns
Storage Time t
s
− − 80
Fall Time t
f
− − 30
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
PZT2907A
http://onsemi.com
3
Figure 1. Delay and Rise
Time Test Circuit
Figure 2. Storage and Fall
Time Test Circuit
INPUT
Z
o
= 50 W
PRF = 150 Hz
RISE TIME ≤ 2.0 ns
0
1.0 k
50
-16 V
200 ns
-30 V
200
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
0
1.0 k
50
-30 V
200 ns
-6.0 V
37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
+15 V
1.0 k
1N916
INPUT
Z
o
= 50 W
PRF = 150 Hz
RISE TIME ≤ 2.0 ns
TYPICAL ELECTRICAL CHARACTERISTICS
1000
100
10
-1000-100-10-1.0-0.1
I
C
, COLLECTOR CURRENT (mA)
h
FE
, CURRENT GAIN
T
J
= 125°C
T
J
= -55°C
T
J
= 25°C
Figure 3. DC Current Gain
1000
100
10
-1000-100-10-1.0
V
CE
= -20 V
T
J
= 25°C
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Current Gain Bandwidth Product
f
T
, CURRENT‐GAIN BANDWIDTH PRODUCT (MHz)
-1.0
-0.8
-0.6
-0.4
-0.2
0
VOLTAGE (VOLTS)
-500-200-100
-50-20-10-0.1 -0.2 -0.5 -1.0 -2.0 -5.0
I
C
, COLLECTOR CURRENT (mA)
Figure 5. “ON” Voltage
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -10 V
V
CE(sat)
@ I
C
/I
B
= 10
30
20
10
7.0
5.0
3.0
2.0
-0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30
REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitances
CAPACITANCE (pF)
C
eb
C
cb
P1-P3P4-P4

PZT2907AT3

Mfr. #:
Buy PZT2907AT3
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 600mA 60V PNP
Lifecycle:
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