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STS2DNF30L

P1-P3P4-P6P7-P9P10-P12
November 2009 Doc ID 7200 Rev 7 1/12
12
STS2DNF30L
Dual n-channel 30 V, 0.09 Ω, 3 A SO-8
STripFET™ Power MOSFET
Features
■ Standard outline for easy automated surface
mount assembly
■ Low threshold gate drive
Application
■ Switching applications
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "single feature size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
max I
D
STS2DNF30L 30V <0.11Ω 3A
S0-8
Table 1. Device summary
Order code Marking Package Packaging
STS2DNF30L 2DF30L SO-8 Tape and reel
www.st.com
Contents STS2DNF30L
2/12 Doc ID 7200 Rev 7
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STS2DNF30L Electrical ratings
Doc ID 7200 Rev 7 3/12
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (v
gs
= 0) 30 V
V
GS
Gate- source voltage ±18 V
I
D
Drain current (continuous) at T
C
= 25°C 3 A
I
D
Drain current (continuous) at T
C
= 100°C 1.9 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 9 A
P
TOT
Total dissipation at T
C
= 25°C dual operation
Total dissipation at T
C
= 25°C single operation
1.6
2
W
W
T
stg
Storage temperature -55 to 150 °C
T
j
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-a
Thermal resistance junction-ambient max single
operation
62.5
°C/W
Thermal resistance junction-ambient max dual
operation
78
T
J
Maximum operating junction ambient 150 °C
T
stg
Storage temperature -55 to 175 °C
P1-P3P4-P6P7-P9P10-P12

STS2DNF30L

Mfr. #:
Buy STS2DNF30L
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 30 Volt 3 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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