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MMBV432LT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1 Publication Order Number:
MMBV432LT1/D
MMBV432LT1
Preferred Device
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control
and tuning, or any top−of−the−line application requiring
back−to−back diode configuration for minimum signal distortion and
detuning. This device is supplied in the SOT−23 plastic package for
high volume, pick and place assembly requirements.
Features
• High Figure of Merit − Q = 150 (Typ) @ V
R
= 2.0 Vdc, f = 100 MHz
• Guaranteed Capacitance Range
• Dual Diodes − Save Space and Reduce Cost
• Surface Mount Package
• Available in 8 mm Tape and Reel
• Monolithic Chip Provides Improved Matching −
Guaranteed ±1.0% (Max) Over Specified Tuning Range
• Pb−Free Package is Available
MAXIMUM RATINGS (Each Diode)
Rating Symbol Value Unit
Reverse Voltage V
R
14 Vdc
Forward Current I
F
200 mAdc
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Junction Temperature T
J
+125 °C
Storage Temperature Range T
stg
−55 to +125 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 9
Device Package Shipping
†
ORDERING INFORMATION
MMBV432LT1 SOT−23 3,000 / Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBV432LT1G SOT−23
(Pb−Free)
3,000 / Tape & Ree
l
Preferred devices are recommended choices for future use
and best overall value.
1
2
3
DUAL VOLTAGE VARIABLE
CAPACITANCE DIODE
12
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
M4B M G
G
M4B = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
MMBV432LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (EACH DIODE) (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 mAdc)
V
(BR)R
14 − − Vdc
Reverse Voltage Leakage Current
(V
R
= 9.0 Vdc)
I
R
− − 100 nAdc
Diode Capacitance
(V
R
= 2.0 Vdc, f = 1.0 MHz)
C
T
43 − 48.1 pF
Capacitance Ratio C2/C8
(f = 1.0 MHz)
C
R
1.5 − 2.0 −
Figure of Merit
(V
R
= 2.0 Vdc, f = 100 MHz)
Q 100 150 − −
MMBV432LT1
http://onsemi.com
3
TYPICAL CHARACTERISTICS (Each Diode)
Figure 1. Diode Capacitance
100
70
30
20
10
110
V
R
, REVERSE VOLTAGE (VOLTS)
C
T
, DIODE CAPACITANCE (pF)
Figure 2. Figure of Merit versus Voltage
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Figure of Merit versus Frequency
f, FREQUENCY (MHz)
Q, FIGURE OF MERIT
0
550
350
50
210
Q, FIGURE OF MERIT
2000
10
500
100
20
30 70 200
V
R
= 2.0 Vdc
T
A
= 25°C
f = 1.0 MHz
T
A
= 25°C
T
A
= 25°C
f = 100 MHz
20 50 100 300
1000
200
50
723 5
50
Figure 4. Diode Capacitance versus Temperature
T
J
, JUNCTION TEMPERATURE (°C)
C
T
, DIODE CAPACITANCE (NORMALIZED)
1.04
−75
1.02
1.00
0.98
0.96
−25 +25 +75 +125
V
R
= 4.0 Vdc
−50 0 +50 +100
Figure 5. Reverse Current versus Reverse Voltage
V
R
, REVERSE VOLTAGE (VOLTS)
I
R
, REVERSE CURRENT (nA)
10
0
2
0.5
0.1
0.01
4812
T
A
= 125°C
2 6 10 14
5
1
0.2
0.05
450
250
150
468
1.06
f = 1.0 MHz
V
R
= 2.0 Vdc
0.02
T
A
= 75°C
T
A
= 25°C
P1-P3P4-P4

MMBV432LT1G

Mfr. #:
Buy MMBV432LT1G
Manufacturer:
ON Semiconductor
Description:
Lifecycle:
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