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SQM50P03-07_GE3

P1-P3P4-P6P7-P9P10-P10
SQM50P03-07
www.vishay.com
Vishay Siliconix
S12-1847-Rev. B, 30-Jul-12
1
Document Number: 67044
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
•TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
•100 % R
g
and UIS Tested
• AEC-Q101 Qualified
d
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) - 30
R
DS(on)
() at V
GS
= - 10 V 0.0070
R
DS(on)
() at V
GS
= - 4.5 V 0.0110
I
D
(A) - 50
Configuration Single
S
G
D
P-Channel MOSFET
TO-263
SDG
Top View
ORDERING INFORMATION
Package TO-263
Lead (Pb)-free and Halogen-free SQM50P03-07-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
- 30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
a
T
C
= 25 °C
I
D
- 50
A
T
C
= 125 °C - 50
Continuous Source Current (Diode Conduction)
a
I
S
- 50
Pulsed Drain Current
b
I
DM
- 200
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
- 50
Single Pulse Avalanche Energy E
AS
125 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
150
W
T
C
= 125 °C 50
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
40
°C/W
Junction-to-Case (Drain) R
thJC
1
SQM50P03-07
www.vishay.com
Vishay Siliconix
S12-1847-Rev. B, 30-Jul-12
2
Document Number: 67044
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= - 250 μA - 30 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 μA - 1.5 - 2.0 - 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= - 30 V - - - 1
μA V
GS
= 0 V V
DS
= - 30 V, T
J
= 125 °C - - - 50
V
GS
= 0 V V
DS
= - 30 V, T
J
= 175 °C - - - 250
On-State Drain Current
a
I
D(on)
V
GS
= - 10 V V
DS
- 5 V - 120 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V I
D
= - 30 A - 0.0050 0.0070
V
GS
= - 10 V I
D
= - 30 A, T
J
= 125 °C - - 0.0102
V
GS
= - 10 V I
D
= - 30 A, T
J
= 175 °C - - 0.0118
V
GS
= - 4.5 V I
D
= - 20 A - 0.0089 0.0110
Forward Transconductance
b
g
fs
V
DS
= - 15 V, I
D
= - 30 A - 62 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= - 25 V, f = 1 MHz
- 4304 5380
pF Output Capacitance C
oss
- 764 955
Reverse Transfer Capacitance C
rss
- 680 850
Total Gate Charge
c
Q
g
V
GS
= - 10 V V
DS
= - 15 V, I
D
= - 75 A
- 103.5 155
nC Gate-Source Charge
c
Q
gs
- 14.3 -
Gate-Drain Charge
c
Q
gd
- 26.9 -
Gate Resistance
R
g
f = 1 MHz 1.4 2.85 4.3
Turn-On Delay Time
c
t
d(on)
V
DD
= - 15 V, R
L
= 0.2
I
D
- 75 A, V
GEN
= - 10 V, R
g
= 1
-1117
ns
Rise Time
c
t
r
-1015
Turn-Off Delay Time
c
t
d(off)
-6395
Fall Time
c
t
f
-2639
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
- - - 200 A
Forward Voltage V
SD
I
F
= - 45 A, V
GS
= 0 V - - 0.9 - 1.5 V
SQM50P03-07
www.vishay.com
Vishay Siliconix
S12-1847-Rev. B, 30-Jul-12
3
Document Number: 67044
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Gate Charge
0
30
60
90
120
150
180
210
0 3 6 9 12 15
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 6 V
V
GS
= 3 V
V
GS
= 4 V
V
GS
= 5 V
0.0
0.3
0.6
0.9
1.2
1.5
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= - 55 °C
T
C
= 125
°
C
0.000
0.006
0.012
0.018
0.024
0.030
0 20 40 60 80 100 120
R
DS(on)
-On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
40
80
120
160
0 2 4 6 8 10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
C
0
2
4
6
8
10
0 20 40 60 80 100 120
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 75 A
V
DS
= 15 V
P1-P3P4-P6P7-P9P10-P10

SQM50P03-07_GE3

Mfr. #:
Buy SQM50P03-07_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-Channel 30V AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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