VS-1N3209

VS-1N3208 Series
www.vishay.com
Vishay Semiconductors
Revision: 12-Nov-15
1
Document Number: 93496
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon Rectifier Diodes,
(Stud Version) 15 A
FEATURES
Low thermal impedance
High case temperature
Excellent reliability
Maximum design flexibility
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
JEDEC
®
registered values
ELECTRICAL SPECIFICATIONS
Notes
(1)
JEDEC registered values
Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g. 1N3208R, 1N3209R
PRODUCT SUMMARY
I
F(AV)
15 A
Package DO-203AB (DO-5)
Circuit configuration Single diode
DO-203AB (DO-5)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
15
(1)
A
T
C
150
(1)
°C
I
FSM
50 Hz 239
A
60 Hz 250
(1)
I
2
t
50 Hz 286
A
2
s
60 Hz 260
I
2
t 3870 A
2
s
V
RRM
Range 50 to 600 V
T
J
-65 to +175 °C
VOLTAGE RATINGS
TYPE NUMBER
V
RRM
, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
(T
J
= -65 °C TO 175 °C)
V
V
RM
, MAXIMUM DIRECT REVERSE VOLTAGE
(T
J
= -65 °C TO 175 °C)
V
VS-1N3208 50
(1)
50
(1)
VS-1N3209 100
(1)
100
(1)
VS-1N3210 200
(1)
200
(1)
VS-1N3211 300
(1)
300
(1)
VS-1N3212 400
(1)
400
(1)
VS-1N3213 500
(1)
500
(1)
VS-1N3214 600
(1)
600
(1)
VS-1N3208 Series
www.vishay.com
Vishay Semiconductors
Revision: 12-Nov-15
2
Document Number: 93496
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
JEDEC registered values
(2)
I
2
t for time t
x
= I
2
t x t
x
Notes
(1)
JEDEC registered values
(2)
Recommended for pass-through holes
(3)
Recommended for holed threaded heatsinks
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
I
F(AV)
180° sinusoidal conduction
15
(1)
A
150
(1)
°C
Maximum peak one cycle
non-repetitive surge current
I
FSM
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Following any rated load
condition and with rated
V
RRM
applied
239
A
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
250
(1)
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Following any rated load
condition and with V
RRM
applied following surge = 0
284
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
297
Maximum I
2
t for fusing
I
2
t
t = 10 ms
With rated V
RRM
applied
following surge,
initial T
J
= 150 °C
286
A
2
s
t = 8.3 ms 260
Maximum I
2
t for individual
device fusing
t = 10 ms
With V
RRM
= 0 following
surge, initial T
J
= 150 °C
403
t = 8.3 ms 368
Maximum I
2
t for individual
device fusing
I
2
t
(2)
t = 0.1 ms to 10 ms, V
RRM
= 0 following surge 3870 A
2
s
Maximum forward voltage drop V
FM
I
F(AV)
= 15 A (47.1 A peak), T
C
= 150 °C 1.5
(1)
V
Maximum average reverse current I
R(AV)
Maximum rated I
F(AV)
and T
C
= 150 °C 10
(1)
mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
and storage temperature range
T
J
, T
Stg
-65 to 175
(1)
°C
Maximum internal thermal
resistance, junction to case
R
thJC
DC operation 0.65
°C/W
Thermal resistance,
case to sink
R
thCS
Mounting surface, smooth, flat and greased 0.25
Maximum allowable mounting torque
(+0 %, -10 %)
Not lubricated thread, tighting on nut
(2)
3.4 (30)
Lubricated thread, tighting on nut
(2)
2.3 (20)
Not lubricated thread, tighting on hexagon
(3)
4.2 (37)
Lubricated thread, tighting on hexagon
(3)
3.2 (28)
Weight
28.5 g
1 oz.
Case style JEDEC DO-203AB (DO-5)
VS-1N3208 Series
www.vishay.com
Vishay Semiconductors
Revision: 12-Nov-15
3
Document Number: 93496
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature
Fig. 2 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses
Fig. 3 - Maximum Low Level Forward Power Loss vs.
Average Forward Current
Fig. 4 - Maximum High Level Forward Power Loss vs.
Average Forward Current
Fig. 5 - Maximum Forward Voltage vs. Forward Current
Ø
Conduction period
18
120°
60°
DC
110
0
5
10
15
20
25
30
35
120 130 140 150 160 170 180
Average Forward Current
Over Full Cycle (A)
Maximum Allowable Case Temperature (°C)
At any rated load condition and
with rated V
RRM
following surge
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude
Half Cycle Current Pulses (N)
1
100
150
200
250
2468 10 20 40 60
50 Hz
60 Hz
Ø
Conduction period
18
120°
60°
DC
T
J
= 140 °C
0
0
10
20
30
40
50
60
70
80
90
100
120
10 20 30 40 50 60 70 8090
Average Forward Power Loss
Over Full Cycle (W)
Average Forward Current Over Full Cycle (A)
10
10
10
2
10
2
10
3
10
4
10
3
10
4
10
5
Average Forward Power Loss
Over Full Cycle (W)
Average Forward Current Over Full Cycle (A)
Ø
Conduction period
T
J
= 140 °C
DC
60°
18
120°
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95360
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
1
01 234567
10
10
2
10
3
T
J
= 140 °C
T
J
= 25 °C

VS-1N3209

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 100 Volt 15 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet