SBL25L30CT, SBLF25L30CT, SBLB25L30CT
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Vishay General Semiconductor
Revision: 13-Jun-2018
1
Document Number: 88731
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Low V
F
Common Cathode Schottky Rectifier
DESIGN SUPPORT TOOLS
FEATURES
• Power pack
• Low power loss, high efficiency
• Very low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for D
2
PAK (TO-263AB) package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
(for ITO-220AB and D
2
PAK (TO-263AB) package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters, switching
mode power supplies, freewheeling diodes, OR-ing diodes,
DC/DC converters, and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 12.5 A
V
RRM
30 V
I
FSM
180 A
V
F
0.39 V
T
J
max. 150 °C
Package TO-220AB, ITO-220AB, D
2
PAK (TO-263AB)
Circuit configuration Common cathode
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
SBL25L30CT
ITO-220AB
SBLF25L30CT
SBLB25L30CT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
1
2
3
D
2
PAK (TO-263AB)
click logo to get started
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SBL25L30CT UNIT
Maximum repetitive peak reverse voltage V
RRM
30 V
Maximum average forward rectified current
at T
C
= 95 °C
total device
I
F(AV)
25
A
per diode 12.5
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
I
FSM
180
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
Isolation voltage (ITO-220AB only) from terminal to heatsink, t = 1 min V
AC
1500 V