SBLB25L30CTHE3_A/P

SBL25L30CT, SBLF25L30CT, SBLB25L30CT
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jun-2018
1
Document Number: 88731
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Low V
F
Common Cathode Schottky Rectifier
DESIGN SUPPORT TOOLS
FEATURES
Power pack
Low power loss, high efficiency
Very low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for D
2
PAK (TO-263AB) package)
Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
AEC-Q101 qualified
(for ITO-220AB and D
2
PAK (TO-263AB) package)
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters, switching
mode power supplies, freewheeling diodes, OR-ing diodes,
DC/DC converters, and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 12.5 A
V
RRM
30 V
I
FSM
180 A
V
F
0.39 V
T
J
max. 150 °C
Package TO-220AB, ITO-220AB, D
2
PAK (TO-263AB)
Circuit configuration Common cathode
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
SBL25L30CT
ITO-220AB
SBLF25L30CT
SBLB25L30CT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
1
2
3
D
2
PAK (TO-263AB)
click logo to get started
Available
Models
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SBL25L30CT UNIT
Maximum repetitive peak reverse voltage V
RRM
30 V
Maximum average forward rectified current
at T
C
= 95 °C
total device
I
F(AV)
25
A
per diode 12.5
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
I
FSM
180
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
Isolation voltage (ITO-220AB only) from terminal to heatsink, t = 1 min V
AC
1500 V
SBL25L30CT, SBLF25L30CT, SBLB25L30CT
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jun-2018
2
Document Number: 88731
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width 40 ms
Note
(1)
AEC-Q101 qualified, available in ITO-220AB and D
2
PAK (TO-263AB)
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT
Maximum instantaneous forward voltage V
F
(1)
12.5 A
T
J
= 125 °C 0.39
V
T
J
= 25 °C 0.49
Maximum instantaneous reverse current at DC blocking
voltage per diode
I
R
(2)
Rated V
R
T
J
= 25 °C 0.90
mAT
J
= 100 °C 50
T
J
= 125 °C 100
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SBL SBLF SBLB UNIT
Typical thermal resistance from junction to case
per diode
R
JC
1.5 4.0 1.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB SBL25L30CT-E3/45 1.85 45 50/tube Tube
ITO-220AB SBLF25L30CT-E3/45 1.99 45 50/tube Tube
TO-263AB SBLB25L30CT-E3/45 1.35 45 50/tube Tube
TO-263AB SBLB25L30CT-E3/81 1.35 81 800/reel Tape and reel
ITO-220AB SBLF25L30CTHE3/45
(1)
1.99 45 50/tube Tube
TO-263AB SBLB25L30CTHE3_A/P
(1)
1.35 P 50/tube Tube
TO-263AB SBLB25L30CTHE3_A/I
(1)
1.35 I 800/reel Tape and reel
SBL25L30CT, SBLF25L30CT, SBLB25L30CT
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jun-2018
3
Document Number: 88731
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
C
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
15
20
30
25
500100150
10
5
T
J
= 150 °C
Resistive or Inductive Load
Average Forward Rectied Current (A)
Lead Temperature (°C)
0
50
100
150
250
200
110010
300
Number of Cycles at 60 Hz
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Peak Forward Surge Current (A)
0 0.2 0.4 0.6
0.01
0.1
10
1
100
0.1 0.3 0.5
T
J
= 150 °C
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 100 °C
T
J
= 125 °C
60402010 10080
0.01
1
10
1000
0.1
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (mA)
100
705030 90
T
J
= 150 °C
0.1 101100
10 000
1000
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Junction Capacitance (pF)
Reverse Voltage (V)
0.10.01 101100
100
10
1
0.1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)

SBLB25L30CTHE3_A/P

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 25A,30V,TO-263AB AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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