DMC4029SSD
Document number: DS36350 Rev. 3 - 2
6 of 8
www.diodes.com
March 2014
© Diodes Incorporated
DMC4029SSD
ADVANCE INFORMATION
NEW PRODUCT
-I , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
, D
AIN-S
U
CE
N-
ESISTANCE ( )
DS(ON)
Ω
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0 5 10 15 20
V = -4.5V
GS
V = -10V
GS
V = -2.5V
GS
0 5 10 15 20 25 30
-I , DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
D
, D
AIN-S
U
CE
N-
ESISTANCE ( )
DS(ON)
Ω
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V= -4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 5 On-Resistance Variation with Temperature
,
AI
-S
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0
0.5
1.5
1.0
2.0
V = -4.5V
I = -5A
GS
D
V = -10V
I = -10A
GS
D
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 6 On-Resistance Variation with Temperature
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(on)
Ω
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
V= -10V
I= A
GS
D
-10
V=5V
I= A
GS
D
-4.
-5
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
A
E
ES
LD V
L
A
E (V)
GS(TH)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I=1mA
D
-
I = -250µA
D
2.0
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
0
5
10
15
20
25
30
-I , S
E
EN
(A)
S
T= 25C
A
°
0 0.3 0.6 0.9 1.2 1.5