DMC4029SSDQ-13

DMC4029SSD
Document number: DS36350 Rev. 3 - 2
4 of 8
www.diodes.com
March 2014
© Diodes Incorporated
DMC4029SSD
ADVANCE INFORMATION
NEW PRODUCT
0.008
0.01
0.012
0.014
0.016
0.018
0.02
0.022
0.024
0 5 10 15 20
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
V = 4.5V
GS
V = 10V
GS
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
345678
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristic
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
I= 5.0A
D
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0
0.5
1
1.5
2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 4.5V
I= 5A
GS
D
V=V
I= 10A
GS
D
10
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESISTA
N
C
E ( )
DS(ON)
Ω
V = 4.5V
I= 5A
GS
D
V=V
I= 10A
GS
D
10
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
I= 1mA
D
I = 250µA
D
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
DMC4029SSD
Document number: DS36350 Rev. 3 - 2
5 of 8
www.diodes.com
March 2014
© Diodes Incorporated
DMC4029SSD
ADVANCE INFORMATION
NEW PRODUCT
P-Channel Q1
0
5
10
15
20
25
30
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Figure 10 Transient Thermal Resistance
r(t), T
R
A
N
SIE
N
T T
H
E
R
MAL
R
ESISTA
N
C
E
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R (t) = r(t) * R
R = 94°C/W
Duty Cycle, D = t1/ t2
θθ
θ
JA JA
JA
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
0
5
10
15
20
25
30
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V= -2.0V
GS
V= -3.0V
GS
V= -4.0V
GS
V= -4.5V
GS
V= -10V
GS
V= -5.0V
GS
012345
V= -2.5V
GS
V= -3.5V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
T = 150C
A
°
T = 125C
A
°
T = 85C
A
°
T = 25C
A
°
T = -55C
A
°
V = -5.0V
DS
DMC4029SSD
Document number: DS36350 Rev. 3 - 2
6 of 8
www.diodes.com
March 2014
© Diodes Incorporated
DMC4029SSD
ADVANCE INFORMATION
NEW PRODUCT
-I , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0 5 10 15 20
V = -4.5V
GS
V = -10V
GS
V = -2.5V
GS
0 5 10 15 20 25 30
-I , DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V= -4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 5 On-Resistance Variation with Temperature
R
,
D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0
0.5
1.5
1.0
2.0
V = -4.5V
I = -5A
GS
D
V = -10V
I = -10A
GS
D
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 6 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(on)
Ω
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
V= -10V
I= A
GS
D
-10
V=5V
I= A
GS
D
-4.
-5
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I=1mA
D
-
I = -250µA
D
2.0
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
0
5
10
15
20
25
30
-I , S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T= 25C
A
°
0 0.3 0.6 0.9 1.2 1.5

DMC4029SSDQ-13

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
MOSFET Comp ENH FET 40VDs 20Vgs 1.3W
Lifecycle:
New from this manufacturer.
Delivery:
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