NTMFS6H800NT1G

© Semiconductor Components Industries, LLC, 2017
August, 2017 − Rev. 1
1 Publication Order Number:
NTMFS6H800N/D
NTMFS6H800N
Power MOSFET
80 V, 2.1 mW, 203 A, Single N−Channel
Features
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
80 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JC
(Notes 1, 3)
Steady
State
T
C
= 25°C
I
D
203
A
T
C
= 100°C 143
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C
P
D
200
W
T
C
= 100°C 100
Continuous Drain
Current R
q
JA
(Notes 1, 2, 3)
Steady
State
T
A
= 25°C
I
D
28
A
T
A
= 100°C 20
Power Dissipation
R
q
JA
(Notes 1 & 2)
T
A
= 25°C
P
D
3.8
W
T
A
= 100°C 1.9
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
900 A
Operating Junction and Storage Temperature T
J
, T
stg
55 to
+ 175
°C
Source Current (Body Diode) I
S
166 A
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 16.1 A)
E
AS
1271 mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
R
q
JC
0.75
°C/W
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
www.onsemi.com
6H800N
AYWZZ
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
80 V
2.1 mW @ 10 V
203 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5)
S
S
S
G
D
D
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
1
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
NTMFS6H800N
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2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
80 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
39
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 80 V
T
J
= 25 °C 10
mA
T
J
= 125°C 250
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 330 mA
2.0 4.0 V
Threshold Temperature Coefficient V
GS(TH)
/T
J
8.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 50 A 1.8 2.1
mW
V
GS
= 6 V I
D
= 50 A 2.6 3.5
Forward Transconductance g
FS
V
DS
=15 V, I
D
= 50 A 138 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 40 V
5530
pF
Output Capacitance C
OSS
760
Reverse Transfer Capacitance C
RSS
27
Output Charge Q
OSS
116 nC
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 40 V; I
D
= 50 A
85
nC
Threshold Gate Charge Q
G(TH)
15
Gate−to−Source Charge Q
GS
26
Gate−to−Drain Charge Q
GD
16
Plateau Voltage V
GP
4.8 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
V
GS
= 10 V, V
DS
= 64 V,
I
D
= 50 A, R
G
= 2.5 W
25
ns
Rise Time t
r
89
Turn−Off Delay Time t
d(OFF)
97
Fall Time t
f
85
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 50 A
T
J
= 25°C 0.8 1.2
V
T
J
= 125°C 0.7
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 50 A
76
ns
Charge Time t
a
36
Discharge Time t
b
40
Reverse Recovery Charge Q
RR
82 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NTMFS6H800N
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3
TYPICAL CHARACTERISTICS
0
50
150
200
350
23
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, NORMALIZED DRAIN−TO
SOURCE RESISTANCE
I
DSS
, LEAKAGE (nA)
5.0 V
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
T
J
= 25°C
I
D
= 50 A
V
GS
= 10 V
I
D
= 50 A
T
J
= 125°C
T
J
= 85°C
4.5 V
V
DS
= 10 V
T
J
= 150°C
5.5 V to 10 V
V
GS
= 4.0 V
0
100
350
0123
0
5
20
34 5 6 7 8 910
0.6
0.8
1.2
1.6
1.8
2.0
−50 −25 0 25 50 75 100 125 150 175
100
1K
1M
5
1.4
4535
T
J
= 25°C
10
5
15 75
150
250
45 6
10
50
2.2
300
200
4
25 55
15
25
300
1.0
35
30
40
1
2.4
0.4
T
J
= 175°C
10K
100K
65
100
250
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
T
J
= 25°C
V
GS
= 10 V
4.0
0 50 200
1.0
2.0
150 300
V
GS
= 6.0 V
1.5
2.5
3.0
3.5
100 250
678

NTMFS6H800NT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET TRENCH 8 80V NFET POWER MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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