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NGD18N40CLBT4

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 10
1 Publication Order Number:
NGD18N40CLB/D
NGD18N40CLB,
NGD18N40ACLB
Ignition IGBT, 18 A, 400 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• DPAK Package Offers Smaller Footprint for Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
• Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (R
G
) and Gate−Emitter Resistor (R
GE
)
• Emitter Ballasting for Short−Circuit Capability
• These are Pb−Free Devices
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CES
430 V
DC
Collector−Gate Voltage V
CER
430 V
DC
Gate−Emitter Voltage V
GE
18 V
DC
Collector Current−Continuous
@ T
C
= 25°C − Pulsed
I
C
15
50
A
DC
A
AC
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 W, C = 200 pF
ESD 800 V
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
115
0.77
Watts
W/°C
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
18 AMPS, 400 VOLTS
V
CE(on)
3 2.0 V @
I
C
= 10 A, V
GE
. 4.5 V
DPAK
CASE 369C
STYLE 7
1
2
3
4
MARKING DIAGRAM
1
Gate
4
Collector
2
Collector
3
Emitter
YWW
G18
N40xG
G18N40x = Device Code
x = B or A
Y = Year
WW = Work Week
G = Pb−Free Device
Device Package Shipping
†
ORDERING INFORMATION
NGD18N40CLBT4G DPAK
(Pb−Free)
2500/Tape &
Reel
NGD18N40ACLBT4G DPAK
(Pb−Free)
2500/Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
C
E
G
R
GE
www.onsemi.com
NGD18N40CLB, NGD18N40ACLB
www.onsemi.com
2
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ T
J
≤ 175°C)
Characteristic Symbol Value Unit
Single Pulse Collector−to−Emitter Avalanche Energy
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 21.1 A, L = 1.8 mH, Starting T
J
= 25°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 16.2 A, L = 3.0 mH, Starting T
J
= 25°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 18.3 A, L = 1.8 mH, Starting T
J
= 125°C
E
AS
400
400
300
mJ
Reverse Avalanche Energy
V
CC
= 100 V, V
GE
= 20 V, Pk I
L
= 25.8 A, L = 6.0 mH, Starting T
J
= 25°C
E
AS(R)
2000
mJ
MAXIMUM SHORT−CIRCUIT TIMES (−55°C ≤ T
J
≤ 150°C)
Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period)
t
sc1
750
ms
Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period) t
sc2
5.0 ms
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case R
θ
JC
1.3 °C/W
Thermal Resistance, Junction to Ambient DPAK (Note 1) R
θ
JA
95 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
L
275 °C
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage BV
CES
I
C
= 2.0 mA
T
J
= −40°C to
150°C
380 395 420 V
DC
I
C
= 10 mA
T
J
= −40°C to
150°C
390 405 430
Zero Gate Voltage Collector Current I
CES
V
CE
= 350 V,
V
GE
= 0 V
T
J
= 25°C − 2.0 20
mA
DC
T
J
= 150°C − 10 40*
T
J
= −40°C − 1.0 10
V
CE
= 15 V,
V
GE
= 0 V
T
J
= 25°C − − 2.0
Reverse Collector−Emitter Leakage Curren
t
I
ECS
V
CE
= −24 V
T
J
= 25°C − 0.7 1.0
mA
T
J
= 150°C − 12 25*
T
J
= −40°C − 0.1 1.0
Reverse Collector−Emitter Clamp Voltage B
VCES(R)
I
C
= −75 mA
T
J
= 25°C 27 33 37
V
DC
T
J
= 150°C 30 36 40
T
J
= −40°C 25 32 35
Gate−Emitter Clamp Voltage BV
GES
I
G
= 5.0 mA
T
J
= −40°C to
150°C
11 13 15 V
DC
Gate−Emitter Leakage Current I
GES
V
GE
= 10 V
T
J
= −40°C to
150°C
384 640 700
mA
DC
Gate Emitter Resistor R
GE
−
T
J
= −40°C to
150°C
10 16 26
k
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. When surface mounted to an FR4 board using the minimum recommended pad size.
*Maximum Value of Characteristic across Temperature Range.
NGD18N40CLB, NGD18N40ACLB
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol Test Conditions Temperature Min Typ Max Unit
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GE(th)
I
C
= 1.0 mA,
V
GE
= V
CE
T
J
= 25°C 1.1 1.4 1.9
V
DC
T
J
= 150°C 0.75 1.0 1.4
T
J
= −40°C 1.2 1.6 2.1*
Threshold Temperature Coefficient
(Negative)
− − − − 3.4 − mV/°C
Collector−to−Emitter On−Voltage V
CE(on)
I
C
= 6.0 A,
V
GE
= 4.0 V
T
J
= 25°C 1.0 1.4 1.6
V
DC
T
J
= 150°C 0.9 1.3 1.6
T
J
= −40°C 1.1 1.45 1.7*
I
C
= 8.0 A,
V
GE
= 4.0 V
T
J
= 25°C 1.3 1.6 1.9*
T
J
= 150°C 1.2 1.55 1.8
T
J
= −40°C 1.4 1.6 1.9*
I
C
= 10 A,
V
GE
= 4.0 V
T
J
= 25°C 1.4 1.8 2.05
T
J
= 150°C 1.4 1.8 2.0
T
J
= −40°C 1.4 1.8 2.1*
I
C
= 15 A,
V
GE
= 4.0 V
T
J
= 25°C 1.8 2.2 2.5
T
J
= 150°C 2.0 2.4 2.6*
T
J
= −40°C 1.7 2.1 2.5
I
C
= 10 A,
V
GE
= 4.5 V
T
J
= 25°C 1.3 1.8 2.0*
T
J
= 150°C 1.3 1.75 2.0*
T
J
= −40°C 1.4 1.8 2.0*
I
C
= 6.5 A,
V
GE
= 3.7 V
T
J
= 25°C − − 1.65
Forward Transconductance gfs V
CE
= 5.0 V, I
C
= 6.0 A T
J
= −40°C to
150°C
8.0 14 25 Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance C
ISS
V
CC
= 25 V, V
GE
= 0 V
f = 1.0 MHz
T
J
= −40°C to
150°C
400 800 1000
pF
Output Capacitance C
OSS
50 75 100
Transfer Capacitance C
RSS
4.0 7.0 10
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive) t
d(off)
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kW, R
L
= 46 W,
T
J
= 25°C − 4.0 10
mSec
Fall Time (Resistive) t
f
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kW, R
L
= 46 W,
T
J
= 25°C − 9.0 15
Turn−On Delay Time t
d(on)
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1.0 kW, R
L
= 1.5 W
T
J
= 25°C − 0.7 4.0
mSec
Rise Time t
r
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1.0 kW, R
L
= 1.5 W
T
J
= 25°C − 4.5 7.0
2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
P1-P3P4-P6P7-P8

NGD18N40CLBT4

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Manufacturer:
ON Semiconductor
Description:
IGBT 430V 15A 115W DPAK
Lifecycle:
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