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TSAL7300

P1-P3P4-P5
TSAL7300
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 24-Aug-11
1
Document Number: 81013
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
DESCRIPTION
TSAL7300 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λ
p
= 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared remote control units with high power
requirements
• Free air transmission systems
• Infrared source for optical counters and card readers
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8389
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) ϕ (deg) λ
p
(nm) t
r
(ns)
TSAL7300 45 ± 22 940 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSAL7300 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1.5 A
Power dissipation P
V
160 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case T
sd
260 °C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm soldered
on PCB
R
thJA
230 K/W
TSAL7300
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 24-Aug-11
2
Document Number: 81013
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21211
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21212
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.35 1.6 V
I
F
= 1 A, t
p
= 100 μs V
F
2.6 3 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.8 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
25 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
30 45 150 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
260 350 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φ
e
35 mW
Temperature coefficient of φ
e
I
F
= 20 mA TKφ
e
- 0.6 %/K
Angle of half intensity ϕ ± 22 deg
Peak wavelength I
F
= 100 mA λ
p
940 nm
Spectral bandwidth I
F
= 100 mA Δλ 50 nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
0.2 nm/K
Rise time
I
F
= 100 mA t
r
800 ns
I
F
= 1 A t
r
500 ns
Fall time
I
F
= 100 mA t
f
800 ns
I
F
= 1 A t
f
500 ns
Virtual source diameter Method: 63 % encircled energy d 2.3 mm
TSAL7300
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 24-Aug-11
3
Document Number: 81013
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
t
p
- Pulse Duration (ms)
96 11987
10
0
10
1
10
1
10
-1
10
-1
10
0
10
2
10
-2
I - Forward Current (A)
F
t
p
/T = 0.01
I
FSM
= 1 A (Single Pulse)
0.05
0.1
0.5
1.0
V
F
- Forward Voltage (V)
13600
10
1
10
0
10
2
10
3
10
4
t
P
= 100 µs
t
P
/T = 0.001
0
I
F
- Forward Current (mA)
4
32
1
14327
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
I
F
- Forward Current (mA)
I - Radiant Intensity (mW/sr)
e
- Radiant Power (mW)
e
I
F
- Forward Current (mA)
13602
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Φ
- 10 10 50 0 100
0
0.4
0.8
1.2
1.6
I
e rel
;
140
94 7993
I
F
= 20 mA
Φ
e rel
T
amb
- Ambient Temperature (°C)
890
0
0.25
0.5
0.75
1.0
1.25
λ - Wavelength (nm)
14291
- Relative Radiant Power
e rel
Φ
I
F
= 100 mA
990
940
P1-P3P4-P5

TSAL7300

Mfr. #:
Buy TSAL7300
Manufacturer:
Vishay Semiconductors
Description:
Infrared Emitters RECOMMENDED ALT 782-TSAL6400
Lifecycle:
New from this manufacturer.
Delivery:
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