FZT751Q
Document Number DS36963 Rev. 2 - 2
4 of 7
www.diodes.com
March 2015
© Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Collector-Base Breakdown Voltage
BV
-80
− −
V
I
= -100µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
-60
− −
V
I
= -10mA
Emitter-Base Breakdown Voltage
BV
-7
− −
V
I
= -100µA
Collector Cut-off Current
I
CBO
−
<1 -100 nA
V
= -60V
− −
-10 µA
V
= -60V, T
= +100°C
Emitter Cut-off Current
I
−
<1
-100 nA
V
= -4V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
−
-0.15 -0.3
V
I
= -1A, I
= -100mA
−
-0.45 -0.6
I
= -3A, I
= -300mA
Base-Emitter Saturation Voltage (Note 10)
V
−
-0.9 -1.25 V
I
= -1A, I
= -100mA
Base-Emitter Turn-On Voltage (Note 10)
V
−
-0.8 -1.0 V
I
= -1A, V
= -2V
DC Current Gain (Note 10)
h
FE
70 200
−
−
I
= -50mA, V
= -2V
100 200 300
I
= -500mA, V
= -2V
80 170
−
I
= -1A, V
= -2V
40 150
−
I
= -2A, V
= -2V
Current Gain-Bandwidth Product
f
T
100 140
−
MHz
V
CE
= -5V, I
C
= -100mA
f = 100MHz
Turn-On Time
t
−
40
−
ns
V
CC
= -10V, I
C
= -500mA
I
B1
= I
B2
= -50mA
Turn-Off Time
t
−
450
−
ns
Output Capacitance
C
− −
30 pF
V
= -10V, f = 1MHz
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
